S-1000N42-N4T1G

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Maximum Collector Current: 500mA
• Maximum Collector-Emitter Voltage: 40V
• Maximum Power Dissipation: 625mW
• Transition Frequency: 300MHz
• Noise Figure: 2dB
• Gain: 20dB

Detailed Pin Configuration

The S-1000N42-N4T1G transistor has three pins:

1. Base (B): Used to control the flow of current through the transistor.
2. Emitter (E): Allows the current to flow out of the transistor.
3. Collector (C): Collects the current flowing through the transistor.

Functional Features

• High Gain: The S-1000N42-N4T1G offers a gain of 20dB, making it suitable for applications requiring signal amplification.
• Low Noise: With a noise figure of only 2dB, this transistor ensures minimal interference in signal processing.
• Wide Frequency Range: The transition frequency of 300MHz allows for efficient amplification across a broad range of frequencies.

Advantages and Disadvantages

Advantages: - High gain enables effective signal amplification. - Low noise figure ensures minimal interference. - Wide frequency range allows for versatile applications.

Disadvantages: - Limited maximum collector current of 500mA may restrict certain high-power applications. - Maximum collector-emitter voltage of 40V limits its use in high-voltage circuits.

Working Principles

The S-1000N42-N4T1G is a bipolar junction transistor (BJT) that operates based on the principles of current amplification. When a small current is applied to the base pin, it controls a larger current flow between the collector and emitter pins. This amplification effect allows the transistor to boost weak signals.

Detailed Application Field Plans

The S-1000N42-N4T1G transistor finds applications in various fields, including:

1. Audio Amplification: It can be used in audio systems to amplify low-level signals from microphones or musical instruments.
2. Radio Frequency (RF) Communication: The transistor's wide frequency range makes it suitable for RF signal amplification in wireless communication devices.
3. Sensor Interfaces: It can be employed in sensor circuits to amplify weak signals from sensors such as temperature, pressure, or light sensors.
4. Oscillator Circuits: The S-1000N42-N4T1G can be utilized in oscillator circuits to generate stable oscillations at specific frequencies.

Detailed and Complete Alternative Models

1. S-1000N41-N4T1G
2. S-1000N43-N4T1G
3. S-1000N44-N4T1G
4. S-1000N45-N4T1G

These alternative models offer similar characteristics and functionality to the S-1000N42-N4T1G transistor, providing options for different design requirements.

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