S-24CS02AFJ-TB-G

Product Overview

Category

The S-24CS02AFJ-TB-G belongs to the category of Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) integrated circuits.

Use

This product is primarily used for non-volatile data storage in various electronic devices, such as microcontrollers, sensors, and consumer electronics.

Characteristics

• Non-volatile memory: The S-24CS02AFJ-TB-G retains stored data even when power is disconnected.
• High storage capacity: This model has a storage capacity of 2 kilobits (256 bytes).
• Low power consumption: It operates at low voltage levels, making it suitable for battery-powered devices.
• Fast data transfer: The S-24CS02AFJ-TB-G supports high-speed I2C communication protocol for efficient data transfer.
• Wide temperature range: It can operate reliably in a temperature range of -40°C to +85°C.

Package

The S-24CS02AFJ-TB-G is available in a small form factor package, such as TSSOP-8 (Thin Shrink Small Outline Package), which allows for easy integration into compact electronic designs.

Essence

The essence of the S-24CS02AFJ-TB-G lies in its ability to provide reliable and non-volatile data storage in a compact and energy-efficient package.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory Capacity: 2 kilobits (256 bytes)
• Interface: I2C (Inter-Integrated Circuit)
• Supply Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 200 years (typical)
• Write Endurance: 1 million cycles (typical)

Detailed Pin Configuration

The S-24CS02AFJ-TB-G has the following pin configuration:

1. VCC - Power supply voltage
2. SDA - Serial data input/output
3. SCL - Serial clock input
4. WP - Write protect input
5. GND - Ground
6. NC - No connection
7. NC - No connection
8. NC - No connection

Functional Features

• Byte-level Read/Write Operations: The S-24CS02AFJ-TB-G allows for individual byte read and write operations, enabling efficient data manipulation.
• Write Protection: The WP pin can be used to protect the memory from accidental writes, ensuring data integrity.
• Software Write Protection: The device supports software write protection, allowing specific memory areas to be locked against modification.
• Sequential Read: It supports sequential read operations, allowing for faster access to consecutive memory locations.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Compact package size enables integration into space-constrained designs.
• Low power consumption extends battery life in portable devices.
• High-speed I2C interface facilitates fast data transfer.
• Wide operating temperature range enhances versatility.

Disadvantages

• Limited storage capacity compared to larger EEPROM models.
• Relatively higher cost per kilobit compared to higher-capacity alternatives.

Working Principles

The S-24CS02AFJ-TB-G utilizes electrically erasable programmable read-only memory technology. It stores data by trapping charges within a floating gate transistor structure. When a specific voltage is applied, these trapped charges can be erased or programmed, allowing for data storage and retrieval.

Detailed Application Field Plans

The S-24CS02AFJ-TB-G finds applications in various fields, including but not limited to:

1. Microcontrollers: Used for storing configuration data, calibration values, and firmware updates.
2. Sensors: Employed for storing calibration data, sensor settings, and unique identification codes.
3. Consumer Electronics: Utilized for storing user preferences, device settings, and log data.

Detailed and Complete Alternative Models

• S-24CS01AFJ-TB-G: 1 kilobit (128 bytes) capacity variant of the same series.
• S-24CS04AFJ-TB-G: 4 kilobits (512 bytes) capacity variant of the same series.
• S-24CS08AFJ-TB-G: 8 kilobits (1024 bytes) capacity variant of the same series.

These alternative models offer different storage capacities to suit specific application requirements.

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