Alliance Memory, Inc.
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AS4C256M8D3LB-12BCN

AS4C256M8D3LB-12BCN

Product Overview

Category

AS4C256M8D3LB-12BCN belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly.

Characteristics

  • Type: DRAM
  • Capacity: 256 Megabits (32 Megabytes)
  • Organization: 256M words x 8 bits
  • Speed: 12ns (nanoseconds)
  • Package: LBGA (Low-Profile Ball Grid Array)
  • Essence: High-speed data storage and retrieval

Packaging/Quantity

AS4C256M8D3LB-12BCN is typically packaged in trays or reels. The quantity per package depends on the manufacturer's specifications and customer requirements.

Specifications

  • Memory Type: Synchronous DRAM (SDRAM)
  • Interface: Parallel
  • Voltage Supply: 2.5V ± 0.2V
  • Operating Temperature Range: -40°C to +85°C
  • Clock Frequency: 83 MHz
  • Refresh Mode: Auto-refresh, Self-refresh
  • Data Retention: Greater than 10 years
  • Package Dimensions: 9mm x 11mm

Detailed Pin Configuration

The AS4C256M8D3LB-12BCN chip has a total of 66 pins. Here is a detailed pin configuration:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. A16
  37. A17
  38. A18
  39. A19
  40. A20
  41. A21
  42. A22
  43. A23
  44. A24
  45. A25
  46. A26
  47. A27
  48. A28
  49. A29
  50. A30
  51. A31
  52. BA0
  53. BA1
  54. RAS#
  55. CAS#
  56. WE#
  57. CKE
  58. CS#
  59. DM0
  60. DM1
  61. VSS
  62. CLK
  63. VDD
  64. VDD
  65. VSS
  66. VSS

Functional Features

  • High-speed data transfer rate
  • Low power consumption
  • Easy integration into various electronic devices
  • Support for auto-refresh and self-refresh modes
  • Reliable data retention
  • Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

  • Fast data access and retrieval
  • Suitable for high-performance computing applications
  • Low power consumption compared to other memory technologies
  • Compact package size for space-constrained designs

Disadvantages

  • Volatile memory, requiring constant power supply to retain data
  • Relatively higher cost compared to non-volatile memory options
  • Limited storage capacity compared to other memory technologies

Working Principles

AS4C256M8D3LB-12BCN operates based on the principles of dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data needs to be periodically refreshed to maintain its integrity.

When a read or write operation is initiated, the memory controller sends the appropriate address and control signals to access the desired location within the memory array. Data is then transferred between the memory chip and the controller via the parallel interface.

Detailed Application Field Plans

AS4C256M8D3LB-12BCN finds applications in various electronic devices and systems, including:

  1. Personal computers
  2. Laptops and notebooks
  3. Servers and data centers
  4. Networking equipment
  5. Graphics cards
  6. Printers and scanners
  7. Automotive electronics
  8. Industrial control systems
  9. Medical devices
  10. Consumer electronics

Detailed and Complete Alternative Models

Here are some alternative models that offer similar functionality to AS4C256M8D3LB-12BC

기술 솔루션에 AS4C256M8D3LB-12BCN 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. Question: What is the capacity of the AS4C256M8D3LB-12BCN memory module?
    Answer: The AS4C256M8D3LB-12BCN is a 256 Megabit (32 Megabyte) memory module.

  2. Question: What is the operating voltage range for this memory module?
    Answer: The AS4C256M8D3LB-12BCN operates at a voltage range of 2.7V to 3.6V.

  3. Question: What is the clock frequency supported by this memory module?
    Answer: The AS4C256M8D3LB-12BCN supports a clock frequency of up to 166 MHz.

  4. Question: What is the data transfer rate of this memory module?
    Answer: The AS4C256M8D3LB-12BCN has a maximum data transfer rate of 333 Mbps.

  5. Question: What is the organization of the memory cells in this module?
    Answer: The AS4C256M8D3LB-12BCN has a x8 organization, meaning it has 8 bits per memory cell.

  6. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the AS4C256M8D3LB-12BCN does not support ECC.

  7. Question: Can this memory module be used in both commercial and industrial applications?
    Answer: Yes, the AS4C256M8D3LB-12BCN is suitable for both commercial and industrial applications.

  8. Question: What is the package type of this memory module?
    Answer: The AS4C256M8D3LB-12BCN comes in a 60-ball FBGA (Fine-Pitch Ball Grid Array) package.

  9. Question: Is this memory module compatible with DDR3 memory controllers?
    Answer: Yes, the AS4C256M8D3LB-12BCN is designed to be compatible with DDR3 memory controllers.

  10. Question: What is the operating temperature range for this memory module?
    Answer: The AS4C256M8D3LB-12BCN has an operating temperature range of -40°C to +85°C.