AS4C8M16D1A-5TINTR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Compact package size
• Package: Thin Small Outline Package (TSOP)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Typically sold in reels of 250 units

Specifications

• Part Number: AS4C8M16D1A-5TINTR
• Organization: 8 Meg x 16
• Speed: 5 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The AS4C8M16D1A-5TINTR IC has a total of 54 pins, which are arranged as follows:

```

Pin Name Description

1 VDD Power Supply 2 DQ0 Data Input/Output Bit 0 3 DQ1 Data Input/Output Bit 1 4 DQ2 Data Input/Output Bit 2 5 DQ3 Data Input/Output Bit 3 6 DQ4 Data Input/Output Bit 4 7 DQ5 Data Input/Output Bit 5 8 DQ6 Data Input/Output Bit 6 9 DQ7 Data Input/Output Bit 7 10 VSS Ground 11 WE Write Enable 12 CAS Column Address Strobe 13 RAS Row Address Strobe 14 A0 Address Bit 0 15 A1 Address Bit 1 16 A2 Address Bit 2 17 A3 Address Bit 3 18 A4 Address Bit 4 19 A5 Address Bit 5 20 A6 Address Bit 6 21 A7 Address Bit 7 22 A8 Address Bit 8 23 A9 Address Bit 9 24 A10 Address Bit 10 25 A11 Address Bit 11 26 A12 Address Bit 12 27 A13 Address Bit 13 28 A14 Address Bit 14 29 A15 Address Bit 15 30 BA0 Bank Address Bit 0 31 BA1 Bank Address Bit 1 32 DQM0 Data Mask Bit 0 33 DQM1 Data Mask Bit 1 34 DM Data Mask 35 CKE Clock Enable 36 CLK Clock 37 CS0 Chip Select 0 38 CS1 Chip Select 1 39 NC No Connection 40 VDDQ Power Supply for I/O Buffers 41-54 NC No Connection ```

Functional Features

• High-speed data transfer
• Low power consumption in standby mode
• Automatic refresh capability
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Compact package size allows for space-efficient designs
• Low power consumption helps prolong battery life in portable devices
• On-die termination reduces signal reflections and improves system performance

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited storage capacity compared to non-volatile memory options
• Requires constant power supply to retain data

Working Principles

The AS4C8M16D1A-5TINTR is a dynamic random access memory (DRAM) module. It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When a read or write operation is performed, the memory controller sends the appropriate address and control signals to access the desired data.

Detailed Application Field Plans

The AS4C8M16D1A-5TINTR memory module finds applications in various electronic devices, including: - Personal computers - Laptops and notebooks - Servers and workstations - Networking equipment - Consumer electronics (e.g., smartphones, tablets)

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to the AS4C8M16D1A-5TINTR include: - AS4C8M16S-6TINR: Similar specifications but with a slightly slower speed of 6 ns. - AS4C8M16S-7TINR: Lower-cost variant with a speed of 7 ns. - AS4C8M16S-10