AS4C8M16S-7BCN

Product Overview

Category

AS4C8M16S-7BCN belongs to the category of semiconductor memory products.

Use

It is primarily used as a random access memory (RAM) module in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation: AS4C8M16S-7BCN offers fast data access and retrieval, making it suitable for applications that require quick processing.
• Large storage capacity: With a capacity of 8 megabits (8M), this memory module can store a significant amount of data.
• Low power consumption: AS4C8M16S-7BCN is designed to operate efficiently with minimal power consumption, making it ideal for portable devices.
• Compact package: The module comes in a small form factor, allowing for easy integration into different electronic systems.
• Reliable performance: It offers reliable and stable performance, ensuring data integrity and system reliability.

Packaging/Quantity

AS4C8M16S-7BCN is typically packaged in a surface mount technology (SMT) package. The exact packaging type may vary depending on the manufacturer. It is commonly available in reels or trays containing multiple units.

Specifications

• Part Number: AS4C8M16S-7BCN
• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 8M x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 7 (CL = 7)
• Package Type: Small Outline Integrated Circuit (SOIC)
• Pin Count: 48 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of AS4C8M16S-7BCN is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. BA0
41. BA1
42. VCCQ
43. VSSQ
44. NC
45. NC
46. VCC
47. VSS
48. NC

Functional Features

• High-speed data access: AS4C8M16S-7BCN offers fast read and write operations, enabling efficient data processing.
• Burst mode support: It supports burst mode operations, allowing for consecutive data transfers without the need for individual commands.
• Auto-refresh capability: The module has an auto-refresh feature that ensures data integrity by periodically refreshing stored information.
• Low latency: AS4C8M16S-7BCN provides low latency access to data, reducing delays in data retrieval.

Advantages

• Fast operation speed enables quick data processing.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates easy integration into various electronic systems.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited compatibility: AS4C8M16S-7BCN may not be compatible with all devices due to variations in pin configurations and voltage requirements.
• Higher cost: Compared to other memory modules, AS4C8M16S-7BCN may have a higher price point due to its specific features and capabilities.

Working Principles

AS4C8M16S-7BCN operates based on synchronous dynamic random access memory (SDRAM) technology. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The module uses clock signals to synchronize data transfers between the memory cells and the device accessing the memory. When a read or write operation is initiated, the appropriate row and column addresses are selected, allowing data to be retrieved or stored in the corresponding memory cell.

Detailed Application Field Plans

AS4C8M16S-7BCN finds applications in various fields, including