AS6C1616-70BINTR

Product Overview

Category

AS6C1616-70BINTR belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Reliable performance

Package

AS6C1616-70BINTR comes in a compact integrated circuit (IC) package.

Essence

The essence of AS6C1616-70BINTR lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

AS6C1616-70BINTR is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Model: AS6C1616-70BINTR
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 16Mbit x 16-bit
• Operating Voltage: 3.3V
• Speed: 70ns (nanoseconds)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

AS6C1616-70BINTR has a total of 48 pins. The pin configuration is as follows:

1. Vcc
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. /WE (Write Enable)
35. /OE (Output Enable)
36. /CE (Chip Enable)
37. /UB (Upper Byte)
38. /LB (Lower Byte)
39. NC (No Connection)
40. GND

Functional Features

• High-speed access: AS6C1616-70BINTR offers fast data read and write operations, making it suitable for applications requiring quick data processing.
• Low power consumption: It is designed to minimize power consumption, making it ideal for battery-powered devices.
• Large storage capacity: With a capacity of 16 megabits, AS6C1616-70BINTR can store a significant amount of data.
• Reliable performance: The memory device ensures reliable and stable operation, ensuring data integrity.

Advantages and Disadvantages

Advantages

• Fast access speed enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity allows for storing extensive data.
• Reliable performance ensures data integrity.

Disadvantages

• Higher cost compared to other types of memory technologies.
• Limited scalability beyond the specified capacity.

Working Principles

AS6C1616-70BINTR operates based on the principles of static random access memory (SRAM). It uses flip-flops to store each bit of data, which allows for faster access times compared to dynamic random access memory (DRAM). The memory cells retain their state as long as power is supplied to the device.

Detailed Application Field Plans

AS6C1616-70BINTR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Mobile phones and smartphones - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AS6C1616-70BINTR include: - AS6C1616-55BINTR: Similar specifications but with a lower access speed of 55ns. - AS6C1616-80BINTR: Similar specifications but with a higher access speed of 80ns. - AS6C1616-3.3V: Similar specifications but operates at a voltage of 3.3V.

These alternative models can be considered based on specific application requirements and cost considerations.

In conclusion, AS6C1616-70BINTR is a high-speed, low-power static random access memory device with a large storage capacity. It offers reliable performance and finds applications in various electronic devices.