AS6C2008-55BIN

Product Overview

Category

AS6C2008-55BIN belongs to the category of semiconductor memory.

Use

It is primarily used for data storage in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Large storage capacity

Package

AS6C2008-55BIN comes in a compact package that is compatible with standard memory sockets.

Essence

The essence of AS6C2008-55BIN lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

This product is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 2 Megabit x 8-bit
• Operating Voltage: 3.3V
• Access Time: 55 nanoseconds
• Data Retention: More than 10 years
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

AS6C2008-55BIN has a total of 28 pins, each serving a specific function. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A18)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (Vcc)
7. Ground (GND)

Functional Features

• Fast read and write operations
• Easy interfacing with microcontrollers and other digital circuits
• Low standby current consumption
• Automatic power-down mode for further power savings
• Built-in error detection and correction mechanisms

Advantages and Disadvantages

Advantages

• High-speed operation allows for efficient data processing
• Low power consumption prolongs battery life in portable devices
• Non-volatile storage ensures data retention even during power loss
• Large storage capacity accommodates a wide range of applications

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity
• Susceptible to electromagnetic interference (EMI) and radiation-induced errors

Working Principles

AS6C2008-55BIN utilizes SRAM technology, which stores each bit of data in a flip-flop circuit. This allows for fast access times but requires constant power supply to retain data.

When a read operation is initiated, the addressed memory location is accessed and the stored data is retrieved. During a write operation, new data is written to the specified memory location.

Detailed Application Field Plans

AS6C2008-55BIN finds application in various electronic devices and systems, including: - Personal computers - Mobile phones - Networking equipment - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. AS6C4008-55BIN: 4 Megabit x 8-bit SRAM with similar specifications
2. AS6C8008-55BIN: 8 Megabit x 8-bit SRAM with similar specifications
3. AS6C16008-55BIN: 16 Megabit x 8-bit SRAM with similar specifications

These alternative models offer increased storage capacity while maintaining compatibility with AS6C2008-55BIN in terms of pin configuration and functionality.

In conclusion, AS6C2008-55BIN is a high-speed, low-power SRAM that provides reliable data storage for a wide range of electronic devices. Its compact package, functional features, and compatibility with alternative models make it a versatile choice for various applications.