AS7C34096B-10TINTR

Product Overview

Category

AS7C34096B-10TINTR belongs to the category of semiconductor memory devices.

Use

It is primarily used as a random access memory (RAM) device in various electronic systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Reliable performance

Package

AS7C34096B-10TINTR is available in a compact and industry-standard package, making it suitable for integration into different electronic devices.

Essence

The essence of AS7C34096B-10TINTR lies in its ability to provide fast and efficient data storage and retrieval functions.

Packaging/Quantity

This product is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

• Part Number: AS7C34096B-10TINTR
• Organization: 4M x 8
• Voltage Range: 2.5V - 3.6V
• Access Time: 10ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP-II

Detailed Pin Configuration

AS7C34096B-10TINTR follows a standard pin configuration:

1. VCC - Power supply voltage
2. A0-A21 - Address inputs
3. DQ0-DQ7 - Data input/output lines
4. WE - Write enable
5. OE - Output enable
6. CE - Chip enable
7. UB/LB - Upper byte/lower byte control
8. NC - No connection
9. GND - Ground

Functional Features

• Fast and reliable data access
• Low power consumption during standby mode
• Easy integration into existing electronic systems
• Compatibility with various microcontrollers and processors

Advantages and Disadvantages

Advantages

• High-speed operation allows for efficient data processing
• Low power consumption helps in reducing overall system energy requirements
• Large storage capacity enables handling of complex applications
• Reliable performance ensures data integrity and system stability

Disadvantages

• Limited compatibility with older systems that require different voltage levels or pin configurations
• Higher cost compared to some alternative memory devices

Working Principles

AS7C34096B-10TINTR operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain data integrity. The device uses address lines to select specific memory locations and data lines to read from or write to those locations.

Detailed Application Field Plans

AS7C34096B-10TINTR finds applications in various electronic systems, including but not limited to: - Personal computers - Servers - Networking equipment - Consumer electronics - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to AS7C34096B-10TINTR include: - AS4C256M16D3L - 4M x 16 DDR3 SDRAM - AS6C4008-55SIN - 512K x 8 SRAM - AS7C1024B-15JCN - 1M x 8 CMOS SRAM

These alternatives offer different specifications and features, allowing users to choose the most suitable option for their specific requirements.

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