HSMS-286F-TR2G

Introduction

HSMS-286F-TR2G is a high-frequency surface mount Schottky barrier diode designed for various electronic applications. This entry provides an overview of the product, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Electronic Components
• Use: High-frequency rectification, mixing, and detection in wireless communication systems, radar systems, and other RF applications.
• Characteristics: High frequency capability, low series resistance, low forward voltage, and small package size.
• Package: Surface Mount Device (SMD)
• Essence: Schottky Barrier Diode
• Packaging/Quantity: Tape and Reel

Specifications

• Forward Voltage: 0.3V (typical) at 1mA
• Reverse Voltage: 15V
• Maximum DC Current: 200mA
• Operating Frequency: Up to 10GHz
• Package Type: SOT-23

Detailed Pin Configuration

The HSMS-286F-TR2G has a standard SOT-23 pin configuration with three pins: Anode, Cathode, and Ground.

| Pin Name | Description | |----------|-------------------| | Anode | Connects to the positive terminal of the circuit | | Cathode | Connects to the negative terminal of the circuit | | Ground | Connected to the ground of the circuit |

Functional Features

• High-frequency rectification and detection
• Low forward voltage drop
• Fast switching speed
• Low series resistance

Advantages and Disadvantages

Advantages

• High-frequency capability
• Low forward voltage
• Small package size
• Suitable for high-speed applications

Disadvantages

• Limited reverse voltage compared to other diodes
• Sensitivity to overvoltage conditions

Working Principles

The HSMS-286F-TR2G operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for fast switching and low forward voltage drop. When a forward bias is applied, the diode conducts current efficiently due to the absence of minority carrier storage time.

Detailed Application Field Plans

The HSMS-286F-TR2G is ideal for use in: - Wireless communication systems - Radar systems - Microwave radio systems - High-frequency signal detection circuits

Detailed and Complete Alternative Models

• HSMS-286K-TR1G
• HSMS-286L-TR1G
• HSMS-286M-TR1G
• HSMS-286N-TR1G

These alternative models offer similar high-frequency capabilities and package sizes, providing flexibility in design and application.

In conclusion, the HSMS-286F-TR2G is a versatile high-frequency Schottky diode suitable for various RF applications, offering high performance in a compact package. Its unique characteristics make it a valuable component in modern electronic designs.

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