2N5195 SL H - Product Overview
Introduction
The 2N5195 SL H is a semiconductor device belonging to the category of bipolar junction transistors (BJTs). This entry provides an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Basic Information Overview
- Category: Bipolar Junction Transistor (BJT)
- Use: Amplification and switching in electronic circuits
- Characteristics: High current gain, low noise, and high frequency capability
- Package: TO-39 metal can package
- Essence: NPN silicon transistor
- Packaging/Quantity: Typically available in reels or tubes containing multiple units
Specifications
- Maximum Collector-Emitter Voltage: 80V
- Maximum Collector Current: 1A
- DC Current Gain (hFE): 100 to 300
- Transition Frequency (fT): 150MHz
- Power Dissipation: 800mW
Detailed Pin Configuration
The 2N5195 SL H transistor has three leads: 1. Collector (C) 2. Base (B) 3. Emitter (E)
Functional Features
- High current gain for amplification applications
- Low noise performance suitable for signal processing
- High frequency capability for RF applications
Advantages and Disadvantages
Advantages
- High current gain allows for efficient signal amplification
- Low noise performance enhances signal fidelity
- High frequency capability enables use in RF circuits
Disadvantages
- Limited power dissipation may restrict use in high-power applications
- Moderate collector-emitter voltage rating compared to some alternatives
Working Principles
The 2N5195 SL H operates as a current-controlled switch or amplifier. In the active region, a small current at the base terminal controls a much larger current flow between the collector and emitter terminals. This amplification effect forms the basis of its functionality in electronic circuits.
Detailed Application Field Plans
The 2N5195 SL H is commonly used in the following application fields: - Audio amplification - Signal processing - Radio frequency (RF) circuits - Switching circuits
Detailed and Complete Alternative Models
Some alternative models to the 2N5195 SL H include: - 2N2222: General-purpose NPN transistor with similar characteristics - BC547: Low power NPN transistor suitable for switching applications - 2N3904: NPN transistor with high current gain and low noise
In conclusion, the 2N5195 SL H is a versatile BJT with high current gain, low noise, and high frequency capabilities, making it suitable for various electronic applications.
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