GD25LE64CLIGR

Product Overview

Category

GD25LE64CLIGR belongs to the category of flash memory chips.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and other consumer electronics.

Characteristics

• Non-volatile memory: The data stored in GD25LE64CLIGR remains intact even when power is turned off.
• High capacity: GD25LE64CLIGR has a storage capacity of 64 megabits (8 megabytes).
• Fast read and write speeds: It offers high-speed data transfer, allowing for quick access to stored information.
• Compact package: GD25LE64CLIGR comes in a small form factor, making it suitable for space-constrained devices.
• Reliable performance: It provides reliable and consistent performance over an extended period.

Package and Quantity

GD25LE64CLIGR is available in a standard SOP-8 package. Each package contains one flash memory chip.

Specifications

• Memory Type: NOR Flash
• Capacity: 64 Megabits (8 Megabytes)
• Interface: SPI (Serial Peripheral Interface)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 100,000 cycles

Pin Configuration

The GD25LE64CLIGR chip has the following pin configuration:

1. CS (Chip Select)
2. SO (Serial Output)
3. WP (Write Protect)
4. GND (Ground)
5. SI (Serial Input)
6. SCLK (Serial Clock)
7. HOLD (Hold)
8. VCC (Power Supply)

Functional Features

• Sector Erase and Program: GD25LE64CLIGR allows for erasing and programming data at the sector level, providing flexibility in managing stored information.
• Fast Read: It supports high-speed read operations, enabling quick access to stored data.
• Write Protection: The WP pin can be used to protect the memory from accidental writes, ensuring data integrity.
• Low Power Consumption: GD25LE64CLIGR is designed to minimize power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Compact form factor
• Reliable performance
• Low power consumption

Disadvantages

• Limited erase/program cycles (100,000 cycles)
• Requires an external SPI interface for communication

Working Principles

GD25LE64CLIGR utilizes NOR flash memory technology. It stores data by trapping electrons in a floating gate, which retains the charge even when power is removed. The stored charge represents binary data (0 or 1). The data can be read, erased, and programmed using specific electrical signals sent through the SPI interface.

Application Field Plans

GD25LE64CLIGR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Set-top boxes - Printers - Automotive electronics - Industrial control systems

Alternative Models

Some alternative models to GD25LE64CLIGR include: - W25Q64JVZPIQ - MX25L6433FM2I-10G - S25FL064LABMFI011

These models offer similar specifications and functionality, providing options for different design requirements.

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