664G-02LFT

Product Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SOT-23
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current (Ic): 100mA
• Maximum Collector-Emitter Voltage (Vceo): 50V
• Maximum Power Dissipation (Pd): 225mW
• Transition Frequency (ft): 300MHz
• Noise Figure (NF): 1dB
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The 664G-02LFT transistor has three pins:

1. Emitter (E): Connected to the emitter region of the transistor.
2. Base (B): Connected to the base region of the transistor.
3. Collector (C): Connected to the collector region of the transistor.

Functional Features

• High gain amplification of weak signals.
• Low noise performance for improved signal quality.
• Suitable for a wide range of applications due to its versatile characteristics.
• Compact SOT-23 package allows for space-efficient designs.
• Reliable and durable construction ensures long-term performance.

Advantages and Disadvantages

Advantages: - High gain amplification improves signal strength. - Low noise figure enhances signal quality. - Wide operating temperature range enables usage in various environments. - Small package size facilitates compact circuit designs.

Disadvantages: - Limited maximum collector current may restrict certain high-power applications. - Transition frequency limits the upper frequency range of signals that can be amplified.

Working Principles

The 664G-02LFT is an NPN bipolar junction transistor. It operates based on the principles of amplification and control of electric current. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals. This amplification allows weak signals to be boosted to usable levels.

Detailed Application Field Plans

The 664G-02LFT transistor finds applications in various fields, including:

1. Audio Amplification: Used in audio amplifiers to amplify low-level audio signals.
2. RF Communication: Employed in RF circuits for amplifying radio frequency signals.
3. Sensor Interface: Utilized in sensor interface circuits to amplify weak sensor signals.
4. Signal Processing: Integrated into signal processing circuits to enhance signal strength and quality.

Detailed and Complete Alternative Models

1. BC547: A widely used general-purpose NPN transistor with similar characteristics.
2. 2N3904: Another popular NPN transistor suitable for various amplification applications.
3. MPSA18: High-gain NPN transistor specifically designed for low noise applications.

These alternative models offer similar functionality and can be considered as substitutes for the 664G-02LFT transistor.

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