Encyclopedia Entry: 71V416L10BEG8

Product Overview

Category

The 71V416L10BEG8 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance

Package

The 71V416L10BEG8 is available in a compact package, designed to ensure easy integration into various electronic devices.

Essence

The essence of the 71V416L10BEG8 lies in its ability to provide efficient and reliable data storage capabilities for electronic systems.

Packaging/Quantity

This product is typically packaged individually and is available in varying quantities depending on the specific requirements of the user.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 4 Megabits (4Mbit)
• Organization: 512K words x 8 bits
• Supply Voltage: 3.3V
• Access Time: 10 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Package Type: 44-pin TSOP (Thin Small Outline Package)

Detailed Pin Configuration

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. CE1
18. CE2
19. WE
20. OE
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. Vcc
30. GND
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed data access and retrieval
• Non-volatile storage
• Low power consumption
• Easy integration into electronic systems
• Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

• Fast access time allows for efficient data processing
• Large storage capacity meets the demands of modern electronic systems
• Low power consumption helps conserve energy
• Reliable performance ensures data integrity

Disadvantages

• Limited compatibility with certain older electronic systems
• Relatively higher cost compared to other memory devices

Working Principles

The 71V416L10BEG8 operates based on the principles of static random access memory (SRAM). It utilizes a combination of flip-flops and logic gates to store and retrieve data. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

The 71V416L10BEG8 finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Alternative Models

1. 71V416L15PHI - Similar specifications with increased capacity (16 Megabits)
2. 71V416L20YGI - Higher speed variant with reduced access time (8 nanoseconds)
3. 71V416S10PHI - Lower power consumption variant with similar capacity and access time

These alternative models provide users with options that cater to specific requirements and constraints.

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