IDW30G120C5BFKSA1
Product Overview
Category
The IDW30G120C5BFKSA1 belongs to the category of power semiconductor devices.
Use
It is used for high-power switching applications in various electronic systems and equipment.
Characteristics
- High voltage and current handling capabilities
- Low on-state voltage drop
- Fast switching speed
- Robust and reliable performance
Package
The IDW30G120C5BFKSA1 is typically available in a compact and rugged package suitable for power electronics applications.
Essence
The essence of the IDW30G120C5BFKSA1 lies in its ability to efficiently control and manage high levels of power in electronic circuits.
Packaging/Quantity
The device is usually packaged individually and is available in varying quantities based on customer requirements.
Specifications
- Voltage Rating: 1200V
- Current Rating: 30A
- Package Type: TO-247
- Gate-Source Threshold Voltage: 3V
- Maximum Operating Temperature: 150°C
- Reverse Recovery Time: <100ns
Detailed Pin Configuration
The IDW30G120C5BFKSA1 typically features three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage blocking capability
- Low conduction losses
- Fast switching characteristics
- Enhanced thermal performance
Advantages
- Efficient power management
- Reduced heat dissipation
- Enhanced system reliability
- Suitable for high-power applications
Disadvantages
- Higher cost compared to lower-rated devices
- Requires proper thermal management in high-power applications
Working Principles
The IDW30G120C5BFKSA1 operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in high-power circuits.
Detailed Application Field Plans
The IDW30G120C5BFKSA1 finds extensive use in the following application fields: - Motor drives - Power supplies - Renewable energy systems - Industrial automation - Electric vehicles
Detailed and Complete Alternative Models
Some alternative models to the IDW30G120C5BFKSA1 include: - IXYS IXGH30N120C3 - Infineon IGBT30P12P4 - STMicroelectronics STGW30NC120HD
In conclusion, the IDW30G120C5BFKSA1 is a high-performance power semiconductor device with versatile applications across various industries, offering efficient power management and reliable operation in high-power electronic systems.
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기술 솔루션에 IDW30G120C5BFKSA1 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is the maximum voltage rating of IDW30G120C5BFKSA1?
- The maximum voltage rating of IDW30G120C5BFKSA1 is 1200V.
What is the continuous current rating of IDW30G120C5BFKSA1?
- The continuous current rating of IDW30G120C5BFKSA1 is 30A.
What type of package does IDW30G120C5BFKSA1 come in?
- IDW30G120C5BFKSA1 comes in a TO-247 package.
What is the typical on-state voltage drop of IDW30G120C5BFKSA1?
- The typical on-state voltage drop of IDW30G120C5BFKSA1 is around 1.8V.
What are the recommended applications for IDW30G120C5BFKSA1?
- IDW30G120C5BFKSA1 is commonly used in applications such as motor drives, solar inverters, and welding equipment.
Does IDW30G120C5BFKSA1 have built-in protection features?
- Yes, IDW30G120C5BFKSA1 has built-in overcurrent and short-circuit protection.
What is the operating temperature range of IDW30G120C5BFKSA1?
- IDW30G120C5BFKSA1 can operate within a temperature range of -40°C to 175°C.
Is IDW30G120C5BFKSA1 suitable for high-frequency switching applications?
- Yes, IDW30G120C5BFKSA1 is suitable for high-frequency switching due to its fast switching characteristics.
What is the gate threshold voltage of IDW30G120C5BFKSA1?
- The gate threshold voltage of IDW30G120C5BFKSA1 is typically around 4V.
Can IDW30G120C5BFKSA1 be used in parallel configurations for higher current requirements?
- Yes, IDW30G120C5BFKSA1 can be used in parallel configurations to meet higher current demands in technical solutions.