이미지는 예시일 수 있습니다.
제품 세부사항은 사양을 확인하세요.
IPB100N06S205ATMA1

IPB100N06S205ATMA1

Product Overview

Category

The IPB100N06S205ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and power applications.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB100N06S205ATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 100A
  • On-State Resistance (RDS(on)): 5.2mΩ
  • Power Dissipation (PD): 300W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB100N06S205ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • High efficiency
  • Enhanced thermal performance
  • Reliable operation in demanding environments

Advantages and Disadvantages

Advantages

  • High current-handling capability
  • Low power dissipation
  • Fast switching characteristics

Disadvantages

  • Sensitivity to static electricity
  • Gate drive considerations required for optimal performance

Working Principles

The IPB100N06S205ATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB100N06S205ATMA1 finds extensive use in: - Switch-mode power supplies - Motor control circuits - Automotive electronics - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to the IPB100N06S205ATMA1 include: - IRF1405PBF - FDP8878 - STP80NF55-06

In conclusion, the IPB100N06S205ATMA1 power MOSFET offers high-performance characteristics and is widely utilized in diverse electronic applications for efficient power management and control.

[Word Count: 311]

기술 솔루션에 IPB100N06S205ATMA1 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain current of IPB100N06S205ATMA1?

    • The maximum drain current of IPB100N06S205ATMA1 is 100A.
  2. What is the maximum voltage rating of IPB100N06S205ATMA1?

    • The maximum voltage rating of IPB100N06S205ATMA1 is 60V.
  3. What is the on-resistance of IPB100N06S205ATMA1?

    • The on-resistance of IPB100N06S205ATMA1 is typically 10.5mΩ at Vgs=10V.
  4. What type of package does IPB100N06S205ATMA1 come in?

    • IPB100N06S205ATMA1 comes in a TO-263-3 package.
  5. What are the typical applications for IPB100N06S205ATMA1?

    • IPB100N06S205ATMA1 is commonly used in motor control, power supplies, and DC-DC converters.
  6. What is the thermal resistance of IPB100N06S205ATMA1?

    • The thermal resistance of IPB100N06S205ATMA1 is 1.25°C/W.
  7. Is IPB100N06S205ATMA1 suitable for automotive applications?

    • Yes, IPB100N06S205ATMA1 is designed for automotive applications.
  8. Does IPB100N06S205ATMA1 have built-in protection features?

    • Yes, IPB100N06S205ATMA1 has built-in overcurrent protection.
  9. What is the gate charge of IPB100N06S205ATMA1?

    • The gate charge of IPB100N06S205ATMA1 is typically 50nC.
  10. Can IPB100N06S205ATMA1 be used in high-frequency switching applications?

    • Yes, IPB100N06S205ATMA1 is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.