이미지는 예시일 수 있습니다.
제품 세부사항은 사양을 확인하세요.
IPD80R1K4CEBTMA1
Product Overview
- Category: Power MOSFET
- Use: Power switching applications
- Characteristics: High power handling, low on-resistance, fast switching speed
- Package: TO-252-3 (DPAK)
- Essence: Efficient power management
- Packaging/Quantity: Tape and reel, 2500 units per reel
Specifications
- Voltage Rating: 80V
- Current Rating: 80A
- On-Resistance: 1.4mΩ
- Gate Charge: 45nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPD80R1K4CEBTMA1 features a standard TO-252-3 pin configuration with the following pins:
1. Gate
2. Drain
3. Source
Functional Features
- Low on-resistance for minimal power loss
- Fast switching speed for efficient power management
- High current handling capability for demanding applications
Advantages and Disadvantages
Advantages
- High power handling capacity
- Low on-resistance for improved efficiency
- Fast switching speed for responsive power control
Disadvantages
- Sensitive to voltage spikes
- Requires careful thermal management at high currents
Working Principles
The IPD80R1K4CEBTMA1 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in various applications.
Detailed Application Field Plans
The IPD80R1K4CEBTMA1 is suitable for a wide range of power switching applications, including:
- Motor control systems
- Power supplies
- Inverters
- Battery management systems
Detailed and Complete Alternative Models
- IPD60R1K4CE - 60V, 80A, 1.4mΩ
- IPD100R1K4CE - 100V, 80A, 1.4mΩ
- IPD80R2K0CE - 80V, 100A, 2.0mΩ
This completes the English editing encyclopedia entry structure for the IPD80R1K4CEBTMA1, covering its product details, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
[Word Count: 298]
기술 솔루션에 IPD80R1K4CEBTMA1 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is the maximum drain-source voltage of IPD80R1K4CEBTMA1?
- The maximum drain-source voltage of IPD80R1K4CEBTMA1 is 800V.
What is the continuous drain current rating of IPD80R1K4CEBTMA1?
- The continuous drain current rating of IPD80R1K4CEBTMA1 is 80A.
What is the on-state resistance (RDS(on)) of IPD80R1K4CEBTMA1?
- The on-state resistance (RDS(on)) of IPD80R1K4CEBTMA1 is 1.4 mΩ.
What is the gate threshold voltage of IPD80R1K4CEBTMA1?
- The gate threshold voltage of IPD80R1K4CEBTMA1 is typically 2.5V.
What are the typical applications for IPD80R1K4CEBTMA1?
- IPD80R1K4CEBTMA1 is commonly used in high-power switching applications such as motor control, power supplies, and inverters.
What is the operating temperature range of IPD80R1K4CEBTMA1?
- The operating temperature range of IPD80R1K4CEBTMA1 is typically -55°C to 150°C.
Does IPD80R1K4CEBTMA1 require a heat sink for operation?
- Depending on the application and power dissipation, a heat sink may be required for optimal performance of IPD80R1K4CEBTMA1.
Is IPD80R1K4CEBTMA1 suitable for automotive applications?
- Yes, IPD80R1K4CEBTMA1 is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
What package type does IPD80R1K4CEBTMA1 come in?
- IPD80R1K4CEBTMA1 is available in a TO-252-3 package.
Are there any recommended companion components or evaluation boards for IPD80R1K4CEBTMA1?
- Infineon provides application notes, reference designs, and evaluation boards that can be used with IPD80R1K4CEBTMA1 to aid in the design and implementation of technical solutions.