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IPS09N03LB G
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IPS09N03LB G

Product Overview

Category

The IPS09N03LB G belongs to the category of power MOSFETs.

Use

It is used for switching and amplifying electronic signals in various applications, including power supplies, motor control, and lighting.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPS09N03LB G is typically available in a TO-220 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels or tubes and is available in varying quantities based on customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 50A
  • On-Resistance (RDS(on)): 9.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 25nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPS09N03LB G has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • Low on-resistance for minimal power dissipation
  • High current-carrying capability
  • Fast switching speed for improved efficiency
  • Robust construction for reliable performance

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Suitable for high-current applications
  • Fast response time

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The IPS09N03LB G operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

Power Supplies

The MOSFET can be used in switch-mode power supplies for efficient voltage regulation and power conversion.

Motor Control

In motor control circuits, it enables precise control of motor speed and direction.

Lighting

For LED drivers and other lighting applications, the MOSFET facilitates efficient power management and dimming control.

Detailed and Complete Alternative Models

  • IRF3205
  • FDP8870
  • STP55NF06L

In conclusion, the IPS09N03LB G is a versatile power MOSFET with excellent characteristics suitable for various electronic applications, offering efficient power management and control capabilities.

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기술 솔루션에 IPS09N03LB G 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of IPS09N03LB G?

    • The maximum drain-source voltage of IPS09N03LB G is 30V.

  2. What is the continuous drain current rating of IPS09N03LB G?

    • The continuous drain current rating of IPS09N03LB G is 9A.

  3. What is the on-state resistance (RDS(on)) of IPS09N03LB G?

    • The on-state resistance (RDS(on)) of IPS09N03LB G is typically 9.5mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IPS09N03LB G?

    • The gate threshold voltage of IPS09N03LB G is typically 2.5V.

  5. Is IPS09N03LB G suitable for use in automotive applications?

    • Yes, IPS09N03LB G is designed for automotive applications.

  6. What is the operating temperature range of IPS09N03LB G?

    • The operating temperature range of IPS09N03LB G is -55°C to 175°C.

  7. Does IPS09N03LB G have built-in ESD protection?

    • Yes, IPS09N03LB G features built-in ESD protection.

  8. What package type is IPS09N03LB G available in?

    • IPS09N03LB G is available in a DPAK (TO-252) package.

  9. Can IPS09N03LB G be used in high-frequency switching applications?

    • Yes, IPS09N03LB G is suitable for high-frequency switching applications.

  10. What are some typical applications for IPS09N03LB G?

    • Typical applications for IPS09N03LB G include power management, motor control, and LED lighting.