IPS13N03LA G
Product Overview
The IPS13N03LA G belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification purposes. This MOSFET is known for its high efficiency, low on-state resistance, and fast switching speed. The package typically consists of a small outline transistor (SOT-223) with a quantity of one per package.
Specifications
- Voltage Rating: 30V
- Current Rating: 13A
- On-State Resistance: 0.013 ohms
- Package Type: SOT-223
- Quantity: 1 per package
Detailed Pin Configuration
The IPS13N03LA G follows the standard pin configuration for SOT-223 packages: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High Efficiency: The MOSFET offers low power dissipation, making it highly efficient in various applications.
- Fast Switching Speed: It has a rapid transition from the off-state to the on-state, enabling quick response in switching operations.
- Low On-State Resistance: This feature minimizes power loss and heat generation during operation.
Advantages and Disadvantages
Advantages
- High efficiency
- Fast switching speed
- Low on-state resistance
Disadvantages
- Sensitivity to voltage spikes
- Limited maximum voltage rating
Working Principles
The IPS13N03LA G operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied, the MOSFET enters the conducting state, allowing current to pass through.
Detailed Application Field Plans
The IPS13N03LA G finds extensive use in various applications, including: - Power supplies - Motor control - LED lighting - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the IPS13N03LA G include: - IRF3708PBF - FQP30N06L - STP16NF06FP
In conclusion, the IPS13N03LA G power MOSFET offers high efficiency, fast switching speed, and low on-state resistance, making it suitable for a wide range of electronic applications.
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What is IPS13N03LA G?
- IPS13N03LA G is a power MOSFET transistor designed for use in various electronic applications, including power supplies, motor control, and lighting.
What is the maximum voltage and current rating of IPS13N03LA G?
- The maximum voltage rating is typically 30V, and the maximum continuous drain current is around 13A.
What are the key features of IPS13N03LA G?
- Some key features include low on-resistance, fast switching speed, and low gate charge, making it suitable for high-efficiency power management solutions.
Can IPS13N03LA G be used in automotive applications?
- Yes, IPS13N03LA G is often used in automotive systems such as engine control units, transmission control modules, and LED lighting.
What are the typical thermal characteristics of IPS13N03LA G?
- The device is designed to have low thermal resistance, enabling efficient heat dissipation in various applications.
Is IPS13N03LA G RoHS compliant?
- Yes, IPS13N03LA G is RoHS compliant, meaning it meets the standards for Restriction of Hazardous Substances in electrical and electronic equipment.
What are some common circuit configurations using IPS13N03LA G?
- Common configurations include buck converters, synchronous rectifiers, and motor drive circuits.
Does IPS13N03LA G require any special gate driving considerations?
- It is recommended to use appropriate gate drivers to ensure optimal performance and reliability, especially in high-frequency switching applications.
Can IPS13N03LA G be used in parallel to increase current handling capability?
- Yes, multiple IPS13N03LA G transistors can be connected in parallel to share the load and increase the overall current handling capability.
Where can I find detailed application notes and technical specifications for IPS13N03LA G?
- Detailed information can be found in the datasheet provided by the manufacturer, as well as in application notes and technical documents available on their website.