IPSH5N03LA G
Product Overview
Category
The IPSH5N03LA G belongs to the category of power MOSFETs.
Use
It is commonly used in electronic circuits and power supply applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPSH5N03LA G is typically available in a TO-220 package.
Essence
This power MOSFET is designed to efficiently control high currents and voltages in various electronic applications.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 50A
- On-Resistance (RDS(on)): 0.011 ohms
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 35nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPSH5N03LA G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and heat generation.
- Fast switching speed enables efficient control of current flow.
Advantages and Disadvantages
Advantages
- Efficient power control
- Low power dissipation
- Fast response time
Disadvantages
- Sensitivity to static electricity
- Requires careful handling during installation
Working Principles
The IPSH5N03LA G operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPSH5N03LA G is suitable for a wide range of applications, including: - Switching power supplies - Motor control - LED lighting - Battery management systems - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the IPSH5N03LA G include: - IRF3205 - FDP8878 - STP55NF06L
In conclusion, the IPSH5N03LA G is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for various electronic applications.
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기술 솔루션에 IPSH5N03LA G 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is IPSH5N03LA G?
- IPSH5N03LA G is a power MOSFET designed for use in various technical solutions, such as power supplies, motor control, and lighting applications.
What is the maximum voltage and current rating of IPSH5N03LA G?
- The maximum voltage rating of IPSH5N03LA G is typically 30V, and the maximum continuous drain current is around 5A.
What are the typical applications of IPSH5N03LA G?
- IPSH5N03LA G is commonly used in DC-DC converters, motor drives, LED lighting, and other power management applications.
Does IPSH5N03LA G require a heat sink for operation?
- Depending on the specific application and operating conditions, a heat sink may be required to ensure optimal thermal performance of IPSH5N03LA G.
What is the on-state resistance (RDS(on)) of IPSH5N03LA G?
- The typical on-state resistance of IPSH5N03LA G is around 0.035 ohms, which contributes to its low conduction losses.
Is IPSH5N03LA G suitable for high-frequency switching applications?
- Yes, IPSH5N03LA G is designed to operate effectively in high-frequency switching circuits, making it suitable for various power conversion systems.
What are the key features of IPSH5N03LA G that make it suitable for technical solutions?
- Some key features include low RDS(on), fast switching speed, low gate charge, and high ruggedness, which collectively make it ideal for power management applications.
Can IPSH5N03LA G be used in automotive electronics?
- Yes, IPSH5N03LA G is often utilized in automotive electronic systems, including engine control units, lighting systems, and power distribution modules.
Are there any recommended driver ICs for driving IPSH5N03LA G?
- Various driver ICs from different manufacturers can be used to drive IPSH5N03LA G, and the selection depends on the specific requirements of the application.
What are the typical thermal considerations when using IPSH5N03LA G in technical solutions?
- Proper thermal management, including heatsinking and airflow, should be considered to maintain the junction temperature within safe limits and ensure reliable operation of IPSH5N03LA G.