Infineon Technologies
이미지는 예시일 수 있습니다.
제품 세부사항은 사양을 확인하세요.
IRF7703GTRPBF
자세히보기 데이터시트

IRF7703GTRPBF

Product Overview

Category

The IRF7703GTRPBF belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive requirements

Package

The IRF7703GTRPBF is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic systems.

Packaging/Quantity

It is usually supplied in reels with a specific quantity per reel, typically 250 or 500 units.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 35A
  • RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The IRF7703GTRPBF has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-state resistance for minimal power loss
  • Fast switching speed for efficient power control
  • High current handling capability for robust performance

Advantages

  • High power handling capacity
  • Low on-state resistance leading to reduced power dissipation
  • Fast switching speed for improved efficiency

Disadvantages

  • Higher gate capacitance compared to some alternative models
  • Sensitive to static electricity and voltage spikes

Working Principles

The IRF7703GTRPBF operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate power flow in electronic circuits.

Detailed Application Field Plans

The IRF7703GTRPBF is widely used in various applications, including: - Switching power supplies - Motor control - Battery management systems - LED lighting - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IRF7703GTRPBF include: - IRF7749L1TRPBF - IRF7757GTRPBF - IRF7769L1TRPBF - IRF7779L1TRPBF

These alternatives offer similar performance characteristics and are suitable replacements for the IRF7703GTRPBF in different applications.

In conclusion, the IRF7703GTRPBF is a versatile power MOSFET that offers high power handling capabilities, fast switching speeds, and low on-state resistance, making it an essential component in various power management applications.

[Word Count: 411]

기술 솔루션에 IRF7703GTRPBF 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of IRF7703GTRPBF?

    • The maximum drain-source voltage of IRF7703GTRPBF is 30V.

  2. What is the continuous drain current rating of IRF7703GTRPBF?

    • The continuous drain current rating of IRF7703GTRPBF is 4.3A.

  3. What is the on-state resistance (RDS(on)) of IRF7703GTRPBF?

    • The on-state resistance (RDS(on)) of IRF7703GTRPBF is typically 22mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IRF7703GTRPBF?

    • The gate threshold voltage of IRF7703GTRPBF is typically 1.5V.

  5. Is IRF7703GTRPBF suitable for use in automotive applications?

    • Yes, IRF7703GTRPBF is designed for automotive applications.

  6. What is the operating temperature range of IRF7703GTRPBF?

    • The operating temperature range of IRF7703GTRPBF is -55°C to 150°C.

  7. Does IRF7703GTRPBF have built-in ESD protection?

    • Yes, IRF7703GTRPBF features built-in ESD protection.

  8. Can IRF7703GTRPBF be used in power management applications?

    • Yes, IRF7703GTRPBF is suitable for power management applications.

  9. What package type does IRF7703GTRPBF come in?

    • IRF7703GTRPBF is available in a PowerPAK® SO-8 package.

  10. Is IRF7703GTRPBF RoHS compliant?

    • Yes, IRF7703GTRPBF is RoHS compliant.