SPB21N10 G
Product Overview
Category
The SPB21N10 G belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic circuits and systems.
Characteristics
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power requirement
Package
The SPB21N10 G is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 21A
- On-State Resistance (RDS(on)): 0.021 ohms
- Gate-Source Voltage (VGS): ±20V
- Total Power Dissipation (PD): 110W
Detailed Pin Configuration
The SPB21N10 G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage tolerance
- Low conduction losses
- Fast switching characteristics
- Compatibility with standard gate drive voltages
Advantages
- Efficient power handling
- Reduced heat dissipation
- Enhanced system reliability
- Suitable for high-frequency applications
Disadvantages
- Sensitivity to electrostatic discharge (ESD)
- Potential for thermal runaway under certain conditions
Working Principles
The SPB21N10 G operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SPB21N10 G finds extensive use in the following applications: - Switched-mode power supplies - Motor control circuits - Electronic lighting systems - Audio amplifiers - DC-DC converters
Detailed and Complete Alternative Models
Some alternative models to the SPB21N10 G include: - IRF540N - FQP30N06L - STP55NF06L - IRLB8748
In conclusion, the SPB21N10 G power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it an essential component in modern electronic systems.
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What is SPB21N10 G?
- SPB21N10 G is a power MOSFET transistor designed for high-speed, high-voltage switching applications.
What are the key features of SPB21N10 G?
- The key features of SPB21N10 G include a low on-resistance, high current capability, and fast switching speed.
What are the typical applications of SPB21N10 G?
- SPB21N10 G is commonly used in applications such as motor control, power supplies, DC-DC converters, and electronic ballasts.
What is the maximum voltage and current rating for SPB21N10 G?
- The maximum voltage rating for SPB21N10 G is typically around 100V, and the maximum continuous drain current is around 20A.
What is the thermal resistance of SPB21N10 G?
- The thermal resistance of SPB21N10 G is typically around 62°C/W, which is important for determining its heat dissipation capabilities.
Is SPB21N10 G suitable for automotive applications?
- Yes, SPB21N10 G is often used in automotive systems such as electronic control units (ECUs), lighting control, and motor drives.
Does SPB21N10 G require any special gate driving considerations?
- SPB21N10 G may require a gate driver with appropriate voltage and current capabilities to ensure proper switching performance.
Can SPB21N10 G be used in parallel to increase current handling?
- Yes, SPB21N10 G can be used in parallel to increase the overall current handling capability in high-power applications.
What are the recommended PCB layout guidelines for SPB21N10 G?
- Proper PCB layout techniques, including minimizing parasitic inductance and ensuring adequate thermal management, are crucial for optimal performance.
Where can I find detailed technical specifications and application notes for SPB21N10 G?
- Detailed technical specifications and application notes for SPB21N10 G can typically be found in the product datasheet provided by the manufacturer or distributor.