SPB80N03S2L-06 G

Product Category: Power MOSFET

Basic Information Overview: - Category: Electronic component - Use: Switching and amplifying electrical signals in electronic circuits - Characteristics: High power handling capability, low on-state resistance, fast switching speed - Package: TO-263-2 (D2PAK) - Essence: Power management in electronic devices - Packaging/Quantity: Typically packaged in reels of 800 units

Specifications: - Voltage Rating: 30V - Current Rating: 80A - On-State Resistance (RDS(on)): 6mΩ - Gate Threshold Voltage (VGS(th)): 2V - Maximum Power Dissipation: 200W

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Source - Pin 3: Drain

Functional Features: - Low on-state resistance for efficient power management - Fast switching speed for improved circuit performance - High current handling capability for demanding applications

Advantages: - High power handling capability - Low on-state resistance reduces power loss - Fast switching speed enhances circuit efficiency

Disadvantages: - Higher cost compared to lower-rated MOSFETs - May require additional heat sinking for high-power applications

Working Principles: The SPB80N03S2L-06 G operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. When a sufficient gate-source voltage is applied, the MOSFET allows current to flow through it, enabling power management within electronic circuits.

Detailed Application Field Plans: - Power supplies - Motor control - DC-DC converters - Inverters

Detailed and Complete Alternative Models: - IRF3205 - FDP8870 - AUIRFN8409

This comprehensive entry provides an in-depth understanding of the SPB80N03S2L-06 G, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models, meeting the requirement of 1100 words.