SPB80N04S2-H4

Introduction

The SPB80N04S2-H4 is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SPB80N04S2-H4.

Basic Information Overview

• Category: Power MOSFET
• Use: The SPB80N04S2-H4 is commonly used in power supply, motor control, and other high-power switching applications.
• Characteristics: High current capability, low on-resistance, fast switching speed, and low gate drive requirements.
• Package: TO-263-3 (D2PAK)
• Essence: The essence of the SPB80N04S2-H4 lies in its ability to efficiently control high currents with minimal power loss.
• Packaging/Quantity: Typically packaged in reels or tubes containing a specific quantity per package.

Specifications

• Voltage Rating: 40V
• Current Rating: 80A
• On-Resistance: 4.5mΩ
• Gate Threshold Voltage: 2V
• Gate Charge: 60nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SPB80N04S2-H4 features a standard TO-263-3 (D2PAK) package with three pins: 1. Pin 1 (Gate): Input for controlling the switching operation of the MOSFET. 2. Pin 2 (Source): Connection to the source terminal of the MOSFET. 3. Pin 3 (Drain): Output terminal for the load connection.

Functional Features

• High Current Capability: Capable of handling high continuous and pulsed currents.
• Low On-Resistance: Minimizes power dissipation and improves efficiency.
• Fast Switching Speed: Enables rapid switching between on and off states.
• Low Gate Drive Requirements: Operates effectively with low gate drive voltage.

Advantages and Disadvantages

Advantages

• High current handling capability
• Low on-resistance for reduced power loss
• Fast switching speed for improved efficiency
• Compatibility with low gate drive voltages

Disadvantages

• Higher cost compared to standard MOSFETs
• Sensitive to static discharge due to its high-performance characteristics

Working Principles

The SPB80N04S2-H4 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET turns on, allowing current to flow through it. Conversely, reducing the gate voltage turns off the MOSFET, interrupting the current flow.

Detailed Application Field Plans

The SPB80N04S2-H4 finds extensive use in various applications, including: - Power supply units - Motor control systems - High-power switching circuits - Inverters and converters - Automotive electronics

Detailed and Complete Alternative Models

Several alternative models to the SPB80N04S2-H4 include: - IRF1405 - FDP8878 - STP80NF03L - AUIRFN8409 - NDP6020P

In conclusion, the SPB80N04S2-H4 power MOSFET offers high-performance characteristics suitable for demanding applications in power electronics. Its efficient current handling, low on-resistance, and fast switching speed make it a preferred choice for various high-power applications.

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