IS42S16800E-75ETLI

Product Overview

Category

IS42S16800E-75ETLI belongs to the category of dynamic random access memory (DRAM) modules.

Use

It is primarily used as a memory component in electronic devices such as computers, laptops, servers, and other computing systems.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compact size for easy integration into various devices

Package

IS42S16800E-75ETLI is typically available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S16800E-75ETLI lies in its ability to provide efficient and reliable data storage and retrieval functions in electronic devices.

Packaging/Quantity

IS42S16800E-75ETLI is commonly packaged individually or in sets, with quantities varying based on the requirements of the device manufacturer or end-user.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 128 Megabytes (MB)
• Organization: 16 Megabits x 8 bits
• Speed: 75 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16800E-75ETLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. BA0
31. BA1
32. CLK
33. CKE
34. CS#
35. DQM0
36. DQM1
37. VSS

Functional Features

• High-speed data transfer rate
• Low power consumption
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for maintaining data integrity
• On-die termination (ODT) for improved signal quality
• Internal pipelined architecture for enhanced performance

Advantages and Disadvantages

Advantages

• Fast data transfer speeds improve overall system performance
• Large storage capacity allows for handling complex tasks and applications
• Compact size enables easy integration into various devices
• Low power consumption helps conserve energy

Disadvantages

• Volatile memory requires constant power supply, leading to potential data loss during power outages or system failures
• Relatively higher cost compared to other types of memory modules
• Limited compatibility with older systems that do not support SDRAM technology

Working Principles

IS42S16800E-75ETLI operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized in rows and columns, allowing for efficient read and write operations. The synchronous nature of the memory ensures that data is transferred in synchronization with an external clock signal, enabling high-speed data access.

Detailed Application Field Plans

IS42S16800E-75ETLI finds application in various fields, including: 1. Personal computers and laptops 2. Servers and data centers 3. Networking equipment 4. Embedded systems 5. Industrial automation 6. Medical devices 7. Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to IS42S16800E-75ETLI include: 1. IS42S16160D-7TLI - 16 Megabit x 16 bits SDRAM module 2. IS45S16400J-7TLA1 - 64 Megabit x 16 bits SDRAM module 3. IS43TR16256AL-125KBLI - 256 Megabit x 16 bits SDRAM module 4. IS46R16320D-6BLA1 - 32 Megabit x 16 bits SDRAM module 5. IS42S32200E-7TLI - 32 Megabit x 8 bits SDRAM module

These alternative models offer different capacities, speeds, and configurations to suit specific requirements of electronic devices