IS42S32160B-6TLI-TR

Product Overview

Category

IS42S32160B-6TLI-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S32160B-6TLI-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S32160B-6TLI-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of IS42S32160B-6TLI-TR modules.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 32M words x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 6
• Interface: Parallel
• Clock Frequency: Up to 166 MHz
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32160B-6TLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CKE
39. /LDQM
40. /UDQM
41. /BA0
42. /BA1
43. VSS
44. VDDQ

Functional Features

• Burst mode operation for efficient data transfer
• Programmable burst length and latency
• On-die termination (ODT) for improved signal integrity
• Auto precharge and power-down modes for power savings
• Internal pipelined architecture for high-speed operation

Advantages and Disadvantages

Advantages

• High-speed data access enables faster processing in electronic devices.
• Large storage capacity allows for storing a significant amount of data.
• Low power consumption helps prolong battery life in portable devices.
• Compact package size facilitates integration into space-constrained designs.
• Reliable performance ensures consistent data storage and retrieval.

Disadvantages

• Sensitive to electrical noise, requiring proper shielding and grounding measures.
• Higher cost compared to other types of memory modules.
• Limited scalability beyond the specified storage capacity.

Working Principles

IS42S32160B-6TLI-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized in rows and columns, allowing for efficient data access through address decoding and multiplexing techniques. The synchronous nature of the memory ensures that data is transferred in synchronization with a clock signal, enabling high-speed operation.

Detailed Application Field Plans

IS42S32160B-6TLI-TR finds extensive application in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Its high-speed performance and large storage capacity make it suitable for applications that require rapid data processing and substantial memory resources.

Detailed and Complete Alternative Models

Some alternative models to IS42S32160B-6TLI-TR include: - MT48LC32M16A2P-75:G - K4S561632H-UC75 - HY57V641620FTP-H - AS4C32M16SB-7TCN

These models offer similar specifications and functionality, providing options for designers and manufacturers based on their specific requirements.

In conclusion, IS42S32160B-6TL