IS42S32200E-6B-TR

Product Overview

Category

IS42S32200E-6B-TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Large storage capacity
• Compact package size

Package

IS42S32200E-6B-TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32200E-6B-TR lies in its ability to provide fast and reliable data storage and retrieval in various electronic devices.

Packaging/Quantity

IS42S32200E-6B-TR is typically packaged in trays or reels, with each containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 32 Megabytes (MB)
• Organization: 2 Megabits x 16 bits
• Speed: 166 Megahertz (MHz)
• Voltage Supply: 3.3 Volts (V)
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of IS42S32200E-6B-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Low power standby mode
• Easy integration with various electronic devices

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact package size
• Suitable for a wide range of electronic devices

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited lifespan due to the nature of dynamic memory cells
• Requires periodic refresh cycles to maintain data integrity

Working Principles

IS42S32200E-6B-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in a matrix of capacitors, where each capacitor represents a single bit of data. The stored data is accessed by applying appropriate voltage levels to the address and control pins, allowing the data to be read or written.

Detailed Application Field Plans

IS42S32200E-6B-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS42S32200E-6B-TR include: - MT48LC32M16A2P-75: Micron Technology Inc. - K4S561632H-UC75: Samsung Electronics Co., Ltd. - HYB39S256160FE-7: Infineon Technologies AG - AS4C32M16SB-7TCN: Alliance Memory Inc.

These alternative models provide comparable specifications and can be used as substitutes for IS42S32200E-6B-TR in various applications.

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