IS61WV51216EDBLL-10BLI

Product Overview

Category

IS61WV51216EDBLL-10BLI belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS61WV51216EDBLL-10BLI is available in a small outline, thin profile (TSOP) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61WV51216EDBLL-10BLI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 512K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS61WV51216EDBLL-10BLI chip has the following pin configuration:

1. Vcc
2. WE#
3. OE#
4. A0-A18
5. DQ0-DQ15
6. CE#
7. UB#
8. LB#
9. CLK
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. GND

(Note: "NC" denotes No Connection)

Functional Features

• Fast random access time
• Low power consumption in standby mode
• Easy interfacing with other electronic components
• High reliability and data integrity
• Multiple chip enable options for flexible memory expansion

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access and processing.
• Low power consumption helps conserve energy and extend battery life in portable devices.
• Large storage capacity enables the handling of vast amounts of data.
• Compact package size facilitates integration into space-constrained designs.
• Reliable performance ensures consistent operation over extended periods.

Disadvantages

• Relatively higher cost compared to other types of memory technologies.
• Limited scalability beyond a certain storage capacity.
• Vulnerable to data loss in case of power failure or improper handling.

Working Principles

IS61WV51216EDBLL-10BLI operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain information as long as power is supplied. The stored data can be accessed randomly, allowing for fast read and write operations.

Detailed Application Field Plans

IS61WV51216EDBLL-10BLI finds applications in various fields, including:

1. Computers and laptops for main memory storage.
2. Smartphones and tablets for temporary data storage.
3. Networking equipment for buffering and caching purposes.
4. Industrial automation systems for storing critical data.
5. Automotive electronics for controlling and monitoring functions.

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61WV51216EDBLL-10BLI include:

1. MT48LC32M16A2P-75: 512K words x 16 bits SRAM, 10 ns access time.
2. AS6C4008-55SIN: 512K words x 16 bits SRAM, 55 ns access time.
3. CY62157EV30LL-45ZSXI: 512K words x 16 bits SRAM, 45 ns access time.

These alternative models can be considered based on specific requirements and availability.

(Note: The above alternatives are provided for illustrative purposes and may not represent an exhaustive list.)

In conclusion, IS61WV51216EDBLL-10BLI is a high-speed, low-power semiconductor memory product primarily used for data storage in various electronic devices. Its compact size, large storage capacity, and reliable performance make it suitable for a wide range of applications. However, it is important to consider the advantages and disadvantages, as well as alternative models, when selecting this product for a specific use case.