IS66WV1M16DBLL-70BLI-TR

Product Overview

Category

IS66WV1M16DBLL-70BLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation: The IS66WV1M16DBLL-70BLI-TR offers fast read and write access times, allowing for efficient data processing.
• Large storage capacity: With a capacity of 1 megabit (1M), this memory device can store a significant amount of data.
• Low power consumption: The IS66WV1M16DBLL-70BLI-TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: This product comes in a small form factor, enabling its integration into space-constrained electronic devices.
• Reliable performance: The IS66WV1M16DBLL-70BLI-TR is known for its high reliability and durability.

Package and Quantity

The IS66WV1M16DBLL-70BLI-TR is typically packaged in a surface-mount technology (SMT) package. It is available in tape and reel packaging, with a standard quantity of 2500 units per reel.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1M x 16 bits
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS66WV1M16DBLL-70BLI-TR has a total of 48 pins. Here is the detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. /WE
35. /OE
36. /UB
37. /LB
38. /CE1
39. /CE2
40. /CE3
41. /CE4
42. /CE5
43. /CE6
44. /CE7
45. /CE8
46. /CE9
47. /CE10
48. GND

Functional Features

• Random Access: The IS66WV1M16DBLL-70BLI-TR allows for random access to any memory location, enabling efficient data retrieval.
• High-Speed Operation: With a fast access time of 70 ns, this memory device ensures quick data processing.
• Easy Integration: The parallel interface simplifies the integration of the IS66WV1M16DBLL-70BLI-TR into various electronic systems.
• Low Power Consumption: This product is designed to minimize power consumption, making it suitable for energy-efficient devices.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for integration into space-constrained devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited compatibility with certain systems that require different memory interfaces.
• Relatively higher cost compared to other memory technologies.

Working Principles

The IS66WV1M16DBLL-70BLI-TR is based on Static Random Access Memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized in a 1M x 16 configuration, allowing for simultaneous read and write operations. The device communicates with the host system through a parallel interface, enabling fast data transfer.

Detailed Application Field Plans

The IS66WV1M16DBLL-70BLI-TR finds applications in various electronic devices and systems, including: - Computers and laptops - Smartphones and tablets - Networking equipment