IS66WV51216DBLL-70BLI-TR

Product Overview

Category

IS66WV51216DBLL-70BLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Low power consumption
• Large storage capacity
• Reliable data retention

Package

IS66WV51216DBLL-70BLI-TR is available in a small outline package (SOP) format.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

IS66WV51216DBLL-70BLI-TR is typically packaged in reels or trays, with each reel containing a specific quantity of units. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Part Number: IS66WV51216DBLL-70BLI-TR
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 512M words x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 70ns
• Interface: Parallel
• Pin Count: 54 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS66WV51216DBLL-70BLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /OE
38. /UB
39. /LB
40. CLK
41. CKE
42. /CS0
43. /CS1
44. /CS2
45. /CS3
46. /CS4
47. /CS5
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VDDQ

Functional Features

• Random access memory
• Synchronous operation
• Burst mode support
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• High-speed operation enables faster data access
• Large storage capacity accommodates extensive data requirements
• Low power consumption prolongs battery life in portable devices
• Reliable data retention ensures data integrity over time

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity

Working Principles

IS66WV51216DBLL-70BLI-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information can be accessed and modified by sending appropriate signals to the memory controller.

Detailed Application Field Plans

IS66WV51216DBLL-70BLI-TR finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Mobile phones and smartphones - Tablets and handheld devices - Automotive electronics - Industrial control systems - Medical equipment - Networking devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS66WV51216DBLL-70BLI-TR include: - MT48LC32M16A2P-75IT: 512M words x 16 bits SDRAM, 3.3V, 75ns speed grade - K4S561632H-UC60: 512M words x 16 bits SDRAM, 3.3V, 60ns speed grade - AS4C64M16D2-25BIN: 512M words x