IS66WV51216EALL-70BLI-TR

Product Overview

Category

IS66WV51216EALL-70BLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS66WV51216EALL-70BLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS66WV51216EALL-70BLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous Static Random Access Memory (SRAM)
• Organization: 512K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 70 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS66WV51216EALL-70BLI-TR is as follows:

1. Vcc
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /WE
35. /OE
36. /UB
37. /LB
38. CLK
39. /CE

Functional Features

• High-speed synchronous operation
• Byte write and read capability
• Automatic power-down mode for reduced power consumption
• Easy interfacing with other digital systems
• Internal self-timed write cycle
• Burst mode for efficient data transfer

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval
• Large storage capacity accommodates a wide range of applications
• Low power consumption helps prolong battery life in portable devices
• Compact package size enables integration into space-constrained designs
• Reliable performance ensures data integrity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance compared to non-volatile memory types
• Volatile nature requires constant power supply to retain data

Working Principles

IS66WV51216EALL-70BLI-TR operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain their state as long as power is supplied. The stored information can be accessed and modified at high speeds.

Detailed Application Field Plans

IS66WV51216EALL-70BLI-TR finds application in various electronic devices and systems, including but not limited to: - Computers and servers - Networking equipment - Mobile phones and tablets - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models to IS66WV51216EALL-70BLI-TR that offer similar functionality include: - MT48LC4M16A2P-7E: 4M x 16-bit Synchronous DRAM (SDRAM) - CY62157EV30LL-45ZSXI: 2M x 8-bit Low-Power SRAM - AS6C4008-55BIN: 4M x 8-bit CMOS SRAM

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, IS66WV51216EALL-70BLI-TR is a high-speed synchronous static random access memory (SRAM) device. It offers large storage capacity, low power consumption, and reliable performance. With its compact package size, it finds application in various electronic devices and systems. While it has advantages such as fast access time and byte write capability, it also has limitations like higher cost and volatility. Understanding