IXDF502D1T/R

Product Overview

• Category: Integrated Circuit (IC)
• Use: Power MOSFET
• Characteristics: High voltage, low on-resistance, small package size
• Package: TO-252 (DPAK)
• Essence: Power switching and amplification
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Drain-Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 5A
• On-Resistance (Rds(on)): 0.35Ω
• Gate-Source Voltage (Vgs): ±20V
• Total Gate Charge (Qg): 15nC
• Operating Temperature Range: -55°C to +150°C

Pin Configuration

The IXDF502D1T/R has the following pin configuration:

_______ D | | S R | | O A | | U I | | R N |_______| C - E S _ O | U | R | C | E | | G | A | T | E | _ | 1 | 2 | D | 3 |

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power losses and improves efficiency.
• Small package size enables space-saving designs.
• Fast switching speed ensures high performance.

Advantages and Disadvantages

Advantages: - High voltage capability - Low on-resistance - Small package size - Fast switching speed

Disadvantages: - Limited current handling capacity (5A)

Working Principles

The IXDF502D1T/R is a power MOSFET that operates based on the principle of field-effect transistors. It consists of a metal-oxide-semiconductor structure, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a positive voltage is applied to the gate, it creates an electric field that attracts electrons towards the surface of the semiconductor, forming a conductive channel. This allows current to flow from the drain to the source. Conversely, when a negative voltage is applied, the channel is depleted, blocking the current flow.

Detailed Application Field Plans

The IXDF502D1T/R is commonly used in the following applications:

1. Power supplies: The high voltage capability and low on-resistance make it suitable for use in switch-mode power supplies, where efficient power conversion is essential.
2. Motor control: The fast switching speed and small package size make it ideal for motor control circuits, enabling precise and responsive control of motors.
3. Lighting systems: The power MOSFET can be utilized in lighting applications such as LED drivers, where high voltage handling and low power losses are crucial.
4. Industrial automation: The IXDF502D1T/R can be employed in various industrial automation systems, including robotics, PLCs (Programmable Logic Controllers), and motor drives.

Detailed and Complete Alternative Models

1. IXDF501PI: Similar specifications, but with a different package (TO-220)
2. IXDF503D1T/R: Higher drain-source voltage (800V) and lower on-resistance (0.25Ω)
3. IXDF504SI: Lower drain-source voltage (400V) and higher continuous drain current (8A)

These alternative models provide options with varying specifications and package sizes to suit different application requirements.

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