IXFA4N100Q-TRL

Product Overview

• Category: Power MOSFET
• Use: High-power switching applications
• Characteristics: High voltage, low on-resistance, high current capability
• Package: TO-220 Full-Pak
• Essence: Power management
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 1000V
• Current Rating: 4A
• On-Resistance: 1.2 Ohms
• Gate Charge: 18nC
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Functional Features

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Advantages and Disadvantages

• Advantages:
  • Suitable for high-power applications
  • Low power dissipation
  • Enhanced thermal performance
• Disadvantages:
  • Higher cost compared to lower voltage MOSFETs
  • Sensitive to static electricity

Working Principles

The IXFA4N100Q-TRL operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is ideal for use in high-power applications such as industrial motor drives, power supplies, and renewable energy systems. Its high voltage rating and low on-resistance make it suitable for efficient power management in these fields.

Detailed and Complete Alternative Models

• IXFA4N100P-TRL: Similar specifications with a different package (TO-262)
• IXFA4N90Q-TRL: Lower voltage rating but similar characteristics
• IXFA4N110Q-TRL: Higher voltage rating with comparable features

This information provides a comprehensive overview of the IXFA4N100Q-TRL, including its product category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.