IXFH220N20X3

Product Overview

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

High voltage and current handling capability
Low on-state resistance
Fast switching speed
Low gate drive power requirement

Package

The IXFH220N20X3 is typically available in a TO-247 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

It is usually packaged individually and comes in standard quantities per package.

Specifications

Voltage Rating: 200V
Current Rating: 220A
On-State Resistance: 0.04 ohms
Gate-Source Voltage (Max): ±20V
Power Dissipation: 625W

Detailed Pin Configuration

The detailed pin configuration of the IXFH220N20X3 includes the gate, drain, and source terminals, which are crucial for its proper integration into electronic circuits.

Functional Features

High voltage and current handling capacity
Low conduction losses
Fast switching characteristics
Compatibility with various driving circuits

Advantages

Efficient power handling
Reduced heat dissipation
Enhanced system reliability
Suitable for high-frequency applications

Disadvantages

Higher cost compared to lower-rated MOSFETs
Requires careful consideration of drive circuitry due to high gate-source voltage

Working Principles

The IXFH220N20X3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device.

Detailed Application Field Plans

The IXFH220N20X3 finds extensive use in: - Switch-mode power supplies - Motor control systems - Inverters and converters - Industrial automation equipment - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IXFH220N20X3 include: - IRFP4668PbF - STP260N4F6 - FDPF33N25T

In conclusion, the IXFH220N20X3 power MOSFET offers high-performance characteristics suitable for demanding power management applications across various industries.

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What is IXFH220N20X3?
- IXFH220N20X3 is a high-performance, low-loss 200V, 220A IGBT (Insulated Gate Bipolar Transistor) designed for various power electronic applications.
What are the key features of IXFH220N20X3?
- The key features include low VCE(sat), fast switching speed, high current capability, and low thermal resistance.
In what technical solutions can IXFH220N20X3 be used?
- IXFH220N20X3 can be used in applications such as motor drives, inverters, UPS systems, solar inverters, and welding equipment.
What is the maximum voltage and current rating of IXFH220N20X3?
- The maximum voltage rating is 200V and the maximum current rating is 220A.
What is the typical switching frequency for IXFH220N20X3?
- The typical switching frequency ranges from several kHz to several MHz, depending on the application and design.
Does IXFH220N20X3 require any specific gate driver circuitry?
- Yes, IXFH220N20X3 requires a suitable gate driver circuitry to ensure proper switching performance and reliability.
What are the thermal considerations for using IXFH220N20X3 in a technical solution?
- Proper thermal management, including heatsinking and temperature monitoring, is essential to ensure the reliable operation of IXFH220N20X3.
Can IXFH220N20X3 be used in parallel configurations for higher current applications?
- Yes, IXFH220N20X3 can be used in parallel configurations to achieve higher current handling capabilities.
Are there any application notes or reference designs available for using IXFH220N20X3?
- Yes, IXYS provides application notes and reference designs to assist engineers in implementing IXFH220N20X3 in their technical solutions.
Where can I find detailed specifications and datasheets for IXFH220N20X3?
- Detailed specifications and datasheets for IXFH220N20X3 can be found on the official IXYS website or through authorized distributors.