IXFN120N25

Product Overview

Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, high current capability
Package: TO-268
Essence: Power efficiency and reliability
Packaging/Quantity: Tube/50 units

Specifications

• Voltage Rating: 250V
• Current Rating: 120A
• RDS(ON): 0.065 ohm
• Gate Charge: 180nC
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The IXFN120N25 has a standard TO-268 pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

• Low RDS(ON) for minimal power dissipation
• Fast switching speed for efficient power control
• High current handling capability for demanding applications

Advantages and Disadvantages

Advantages: - High voltage and current ratings - Low on-state resistance - Fast switching speed

Disadvantages: - Relatively high gate charge - Limited availability of alternative models

Working Principles

The IXFN120N25 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

The IXFN120N25 is suitable for a wide range of high-power applications including: - Motor drives - Power supplies - Inverters - Welding equipment - Industrial automation

Detailed and Complete Alternative Models

While the IXFN120N25 offers unique characteristics, alternative models with similar specifications include: - IXFN110N30 - IXFN130N25 - IXFN125N20

In conclusion, the IXFN120N25 is a high-performance power MOSFET designed for demanding high-power switching applications. With its high voltage and current ratings, low on-state resistance, and fast switching speed, it offers excellent power efficiency and reliability. Its application spans across various industries, making it a versatile choice for power electronics design.

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