IXFN210N30X3
Product Overview
Category
The IXFN210N30X3 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic circuits and systems.
Characteristics
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power requirement
Package
The IXFN210N30X3 is typically available in a TO-268 package.
Essence
This power MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
The standard packaging for the IXFN210N30X3 includes a quantity of 50 units per tube.
Specifications
- Voltage Rating: 300V
- Current Rating: 210A
- RDS(ON): 0.042 Ohms
- Gate Threshold Voltage: 2.5V
- Total Gate Charge: 180nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IXFN210N30X3 features a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage and current handling capacity
- Low on-state resistance for minimal power loss
- Fast switching speed for efficient operation
- Low gate drive power requirement for improved energy efficiency
Advantages
- Suitable for high-power applications
- Efficient power management
- Fast and reliable switching performance
- Low power dissipation
Disadvantages
- Higher cost compared to lower power MOSFETs
- May require additional heat dissipation measures in high-power applications
Working Principles
The IXFN210N30X3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows a high current to pass through with minimal resistance.
Detailed Application Field Plans
The IXFN210N30X3 is commonly used in the following applications: - Switching power supplies - Motor control systems - Inverters and converters - High-power amplifiers - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IXFN210N30X3 include: - IXFN240N10T - IXFN170N10T - IXFN200N20T - IXFN220N15T
In conclusion, the IXFN210N30X3 power MOSFET offers high-performance characteristics suitable for various high-power switching applications. Its efficient power management capabilities and fast switching speed make it an ideal choice for demanding electronic systems and circuits.
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기술 솔루션에 IXFN210N30X3 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is the maximum voltage rating of IXFN210N30X3?
- The maximum voltage rating of IXFN210N30X3 is 300V.
What is the maximum current rating of IXFN210N30X3?
- The maximum current rating of IXFN210N30X3 is 210A.
What type of package does IXFN210N30X3 come in?
- IXFN210N30X3 comes in a TO-264 package.
What are the typical applications for IXFN210N30X3?
- IXFN210N30X3 is commonly used in motor drives, inverters, and power supplies.
What is the on-state resistance of IXFN210N30X3?
- The on-state resistance of IXFN210N30X3 is typically 0.065 ohms.
Does IXFN210N30X3 require a heat sink for operation?
- Yes, IXFN210N30X3 typically requires a heat sink for efficient operation.
What is the maximum junction temperature for IXFN210N30X3?
- The maximum junction temperature for IXFN210N30X3 is 175°C.
Is IXFN210N30X3 suitable for high-frequency switching applications?
- Yes, IXFN210N30X3 is suitable for high-frequency switching applications.
Does IXFN210N30X3 have built-in protection features?
- IXFN210N30X3 may have built-in protection features such as overcurrent protection.
What are the recommended gate drive voltage levels for IXFN210N30X3?
- The recommended gate drive voltage levels for IXFN210N30X3 typically range from 15V to 20V.