IXFN50N80Q2

Product Overview

Use

It is commonly used in power electronics applications such as motor control, power supplies, and inverters.

Characteristics

High voltage capability
Low on-state resistance
Fast switching speed
High reliability

Package

The IXFN50N80Q2 is typically available in a TO-268 package.

Essence

This power MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels with a quantity of 500 units per reel.

Specifications

Voltage Rating: 800V
Current Rating: 50A
RDS(ON): 0.08Ω
Gate Threshold Voltage: 4V
Total Gate Charge: 110nC
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXFN50N80Q2 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

Low conduction losses
High efficiency
Enhanced thermal performance
Robustness against overcurrent and overvoltage conditions

Advantages

High voltage capability
Low on-state resistance
Fast switching speed
Reliable performance under demanding conditions

Disadvantages

Higher cost compared to standard MOSFETs
Requires careful thermal management due to high power dissipation

Working Principles

The IXFN50N80Q2 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is well-suited for a wide range of applications including: - Motor drives - Uninterruptible power supplies (UPS) - Solar inverters - Switch-mode power supplies - Electric vehicle charging systems

Detailed and Complete Alternative Models

Some alternative models to the IXFN50N80Q2 include: - IXFN55N120Q3 - IRFP4668PBF - STW45NM50FD

In conclusion, the IXFN50N80Q2 power MOSFET offers high-performance characteristics suitable for various power electronics applications, providing efficient power management and control.

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기술 솔루션에 IXFN50N80Q2 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

What is IXFN50N80Q2?
- IXFN50N80Q2 is a high power MOSFET designed for various technical solutions requiring efficient switching and low on-state resistance.
What are the key features of IXFN50N80Q2?
- The key features include a high current rating, low on-state resistance, fast switching speed, and a rugged design suitable for demanding applications.
What are the typical applications of IXFN50N80Q2?
- Typical applications include motor control, power supplies, inverters, welding equipment, and other high-power electronic systems.
What is the maximum voltage and current rating of IXFN50N80Q2?
- The maximum voltage rating is 800V, and the current rating is typically 50A.
How does IXFN50N80Q2 compare to other similar MOSFETs in the market?
- IXFN50N80Q2 offers a good balance of performance, ruggedness, and cost-effectiveness compared to other MOSFETs in its class.
What are the thermal considerations for using IXFN50N80Q2 in a technical solution?
- Proper heat sinking and thermal management are essential due to the high power dissipation characteristics of IXFN50N80Q2.
Can IXFN50N80Q2 be used in parallel configurations for higher current applications?
- Yes, IXFN50N80Q2 can be used in parallel to increase the current handling capability in high-power applications.
Are there any specific layout or PCB design considerations when using IXFN50N80Q2?
- It is important to minimize parasitic inductance and ensure proper gate drive circuitry for optimal performance.
What are the recommended operating conditions for IXFN50N80Q2?
- The recommended operating conditions include a specified gate-source voltage, drain current, and junction temperature for safe and reliable operation.
Where can I find detailed technical specifications and application notes for IXFN50N80Q2?
- Detailed technical specifications and application notes can be found in the product datasheet and application notes provided by the manufacturer.