IXGP90N33TCM-A

Product Overview

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The IXGP90N33TCM-A is typically available in a TO-220 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): 330V
Continuous Drain Current (ID): 90A
On-Resistance (RDS(on)): 0.033Ω
Gate-Source Voltage (VGS): ±20V
Total Gate Charge (Qg): 160nC
Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The pin configuration of the IXGP90N33TCM-A typically includes three pins: Gate (G), Drain (D), and Source (S).

Functional Features

High voltage capability allows for use in various power applications.
Low on-resistance minimizes power loss and heat generation.
Fast switching speed enables efficient power control.

Advantages and Disadvantages

Advantages

High voltage capability suitable for diverse applications
Low on-resistance for improved efficiency
Fast switching speed for precise power control

Disadvantages

May require additional circuitry for optimal performance in some applications
Sensitivity to static electricity requires careful handling during installation

Working Principles

The IXGP90N33TCM-A operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXGP90N33TCM-A is commonly used in: - Power supplies - Motor control systems - Inverters - Switching regulators - Industrial automation equipment

Detailed and Complete Alternative Models

Some alternative models to the IXGP90N33TCM-A include: - IRFP460: Similar high-voltage MOSFET with comparable specifications - FDP8878: Alternative MOSFET with different packaging options - STP90NF03L: MOSFET with similar characteristics and performance

In conclusion, the IXGP90N33TCM-A is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of high-power switching applications in various electronic systems.

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기술 솔루션에 IXGP90N33TCM-A 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

What is the maximum drain-source voltage of IXGP90N33TCM-A?
- The maximum drain-source voltage of IXGP90N33TCM-A is 330V.
What is the continuous drain current rating of IXGP90N33TCM-A?
- The continuous drain current rating of IXGP90N33TCM-A is 90A.
What type of package does IXGP90N33TCM-A come in?
- IXGP90N33TCM-A comes in a TO-220 package.
What is the on-state resistance of IXGP90N33TCM-A?
- The on-state resistance of IXGP90N33TCM-A is typically 8.5mΩ.
Can IXGP90N33TCM-A be used for high-power applications?
- Yes, IXGP90N33TCM-A is suitable for high-power applications due to its high current and voltage ratings.
What are the typical applications of IXGP90N33TCM-A?
- IXGP90N33TCM-A is commonly used in motor control, power supplies, and inverters.
Does IXGP90N33TCM-A require a heat sink for proper operation?
- Yes, it is recommended to use a heat sink with IXGP90N33TCM-A to ensure proper thermal management.
What is the gate threshold voltage of IXGP90N33TCM-A?
- The gate threshold voltage of IXGP90N33TCM-A is typically 2.5V.
Is IXGP90N33TCM-A suitable for automotive applications?
- Yes, IXGP90N33TCM-A is suitable for automotive applications due to its rugged construction and high current handling capability.
What are the key advantages of using IXGP90N33TCM-A in technical solutions?
- The key advantages of using IXGP90N33TCM-A include its high current and voltage ratings, low on-state resistance, and suitability for high-power applications.