SST39VF1601-70-4I-B3KE-T-MCH

Product Overview

Category

The SST39VF1601-70-4I-B3KE-T-MCH belongs to the category of non-volatile memory devices.

Use

This product is commonly used in electronic systems for storing and retrieving data. It provides a reliable and long-term storage solution.

Characteristics

• Non-volatile: The SST39VF1601-70-4I-B3KE-T-MCH retains data even when power is removed.
• High capacity: This device has a storage capacity of 16 megabits (2 megabytes).
• Fast access time: With a speed of 70 nanoseconds, it allows for quick data retrieval.
• Low power consumption: The SST39VF1601-70-4I-B3KE-T-MCH operates efficiently, minimizing energy usage.
• Wide temperature range: It can function reliably in temperatures ranging from -40°C to 85°C.

Package

The SST39VF1601-70-4I-B3KE-T-MCH is available in a compact package, which ensures easy integration into various electronic systems.

Essence

This product serves as a crucial component in electronic devices, enabling them to store and access data reliably.

Packaging/Quantity

The SST39VF1601-70-4I-B3KE-T-MCH is typically packaged in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Type: Flash
• Organization: 2M x 8
• Voltage Supply: 2.7V - 3.6V
• Interface: Parallel
• Access Time: 70 ns
• Operating Temperature Range: -40°C to 85°C
• Package/Case: 48-TFBGA
• Mounting Type: Surface Mount
• Packaging: Tape & Reel (TR)
• Supplier Device Package: 48-TFBGA (6x8)

Detailed Pin Configuration

The SST39VF1601-70-4I-B3KE-T-MCH has a 48-pin TFBGA package with the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. DQ0
27. DQ1
28. DQ2
29. DQ3
30. DQ4
31. DQ5
32. DQ6
33. DQ7
34. CE#
35. OE#
36. WE#
37. RY/BY#
38. RESET#
39. WP#
40. VSS
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Fast Read and Write Operations: The SST39VF1601-70-4I-B3KE-T-MCH offers high-speed data access, allowing for efficient read and write operations.
• Sector Erase Capability: It supports sector-based erasure, enabling selective deletion of specific portions of the memory.
• Data Protection: This device incorporates various mechanisms to prevent accidental data corruption or loss.
• Low Power Consumption: The SST39VF1601-70-4I-B3KE-T-MCH operates with low power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Wide temperature range makes it suitable for various environments.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited rewrite cycles: Flash memory has a finite number of erase/write cycles before degradation occurs.
• Relatively higher cost compared to other types of memory.
• Susceptible to electromagnetic interference (EMI) due to its electronic nature.

Working Principles

The SST39VF1601-70-4I-B3KE-T-MCH utilizes flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary values (0 or 1). To write data, the device applies a high voltage to the control gate, allowing electrons to tunnel through the ins