EDB8164B4PK-1D-F-D

Product Overview

Category

EDB8164B4PK-1D-F-D belongs to the category of electronic memory modules.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, servers, and embedded systems.

Characteristics

• High-speed data access
• Non-volatile memory
• Compact size
• Low power consumption

Package

The EDB8164B4PK-1D-F-D module is packaged in a small form factor, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and reliably, enhancing the overall performance of electronic systems.

Packaging/Quantity

Each package contains one EDB8164B4PK-1D-F-D module.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 8 megabytes (MB)
• Data Bus Width: 16 bits
• Operating Voltage: 3.3 volts (V)
• Speed: 133 megahertz (MHz)
• Refresh Rate: 64 milliseconds (ms)

Detailed Pin Configuration

The EDB8164B4PK-1D-F-D module has the following pin configuration:

1. Vcc (+3.3V)
2. DQ0 (Data Input/Output Bit 0)
3. DQ1 (Data Input/Output Bit 1)
4. DQ2 (Data Input/Output Bit 2)
5. DQ3 (Data Input/Output Bit 3)
6. DQ4 (Data Input/Output Bit 4)
7. DQ5 (Data Input/Output Bit 5)
8. DQ6 (Data Input/Output Bit 6)
9. DQ7 (Data Input/Output Bit 7)
10. DQ8 (Data Input/Output Bit 8)
11. DQ9 (Data Input/Output Bit 9)
12. DQ10 (Data Input/Output Bit 10)
13. DQ11 (Data Input/Output Bit 11)
14. DQ12 (Data Input/Output Bit 12)
15. DQ13 (Data Input/Output Bit 13)
16. DQ14 (Data Input/Output Bit 14)
17. DQ15 (Data Input/Output Bit 15)
18. A0 (Address Bit 0)
19. A1 (Address Bit 1)
20. A2 (Address Bit 2)
21. A3 (Address Bit 3)
22. A4 (Address Bit 4)
23. A5 (Address Bit 5)
24. A6 (Address Bit 6)
25. A7 (Address Bit 7)
26. A8 (Address Bit 8)
27. A9 (Address Bit 9)
28. A10 (Address Bit 10)
29. A11 (Address Bit 11)
30. /RAS (Row Address Strobe)
31. /CAS (Column Address Strobe)
32. /WE (Write Enable)
33. /OE (Output Enable)
34. /CS (Chip Select)
35. Vss (Ground)

Functional Features

• Random access to stored data
• High-speed read and write operations
• Low latency for improved system performance
• Compatibility with standard memory interfaces
• Error correction capabilities for data integrity

Advantages and Disadvantages

Advantages

• Fast data access speeds
• Compact size allows for easy integration into various devices
• Low power consumption prolongs battery life in portable devices
• Error correction ensures data reliability

Disadvantages

• Limited storage capacity compared to other memory technologies
• Volatile memory requires constant power supply to retain data

Working Principles

The EDB8164B4PK-1D-F-D module operates based on the principles of dynamic random access memory (DRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. To read or write data, the module activates specific rows and columns within the matrix using row and column address strobes. The data is then transferred through the data input/output pins.

Detailed Application Field Plans

The EDB8164B4PK-1D-F-D module finds applications in various fields, including:

1. Personal computers
2. Servers
3. Networking equipment
4. Industrial automation systems
5. Medical devices
6. Automotive electronics

Detailed and Complete Alternative Models

1. EDB8168B4PK-1D-F-D: Similar to EDB8164B4PK-1D-F-D but with higher capacity (16MB).
2. EDB4128B4PK-1D-F-D: Lower capacity variant