JS28F256M29EWLB TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Reliable and durable
• Package: EWLB (Embedded Wafer-Level Ball Grid Array)
• Essence: Advanced flash memory technology for efficient data storage
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Interface: Parallel
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Erase/Program Cycles: Up to 100,000 cycles
• Data Retention: Up to 20 years

Pin Configuration

The JS28F256M29EWLB TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CE#
30. RE#
31. WE#
32. WP#
33. RY/BY#
34. BYTE#
35. DQ0
36. DQ1
37. DQ2
38. DQ3
39. DQ4
40. DQ5
41. DQ6
42. DQ7
43. VSS
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• High-speed read and write operations for efficient data access
• Advanced error correction techniques for enhanced reliability
• Built-in wear-leveling algorithms to extend the lifespan of the memory
• Power-saving features to optimize energy consumption
• Support for various data protection mechanisms, such as write protection and block locking

Advantages and Disadvantages

Advantages: - Fast read and write speeds - Reliable and durable - Efficient power management - Support for data protection mechanisms

Disadvantages: - Limited capacity compared to higher-end flash memory options - Higher cost per megabyte compared to larger capacity alternatives

Working Principles

The JS28F256M29EWLB TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. The memory cells are accessed through an address bus and data bus, allowing for read and write operations.

Application Field Plans

The JS28F256M29EWLB TR is suitable for a wide range of applications, including but not limited to: - Solid-state drives (SSDs) - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics

Alternative Models

• JS28F256M29EWLBT
• JS28F256M29EWLBN
• JS28F256M29EWLBR
• JS28F256M29EWLBW

These alternative models offer similar specifications and functionality, providing customers with flexibility in choosing the most suitable option for their specific requirements.

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