JS28F640P30BF75D

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory technology for long-term data storage
• Packaging/Quantity: Available in various packaging options (e.g., surface mount) with quantity per package varying based on manufacturer specifications.

Specifications

• Capacity: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: Up to 20 years

Pin Configuration (Detailed)

The JS28F640P30BF75D flash memory IC has a total of 48 pins. The pin configuration is as follows:

1. VPP: Programming Voltage Supply
2. A0-A18: Address Inputs
3. DQ0-DQ15: Data Input/Output
4. WE#: Write Enable
5. CE#: Chip Enable
6. OE#: Output Enable
7. RP#/BYTE#: Reset/Byte#
8. RY/BY#: Ready/Busy#
9. WP#/ACC: Write Protect/Accumulator
10. VCC: Power Supply
11. GND: Ground

(Note: This is a simplified representation. Please refer to the datasheet for the complete pin configuration.)

Functional Features

• High-speed read and write operations
• Efficient programming and erasing mechanisms
• Reliable data retention even in harsh environmental conditions
• Low power consumption
• Built-in error correction mechanisms
• Support for various interface protocols

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Non-volatile memory (data retention even without power) - Wide operating temperature range - High endurance (program/erase cycles)

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited write endurance compared to some newer memory technologies - Requires additional circuitry for interfacing with the host system

Working Principles

The JS28F640P30BF75D flash memory utilizes a floating gate transistor structure to store data. It employs a combination of electric fields and charge trapping techniques to retain information even when power is removed. The memory cells are organized in a grid-like array, with each cell capable of storing one or more bits of data. When programming or erasing, voltage pulses are applied to specific cells to modify their charge levels, representing the desired data.

Detailed Application Field Plans

The JS28F640P30BF75D flash memory finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics (e.g., digital cameras, smartphones)

Alternative Models (Detailed and Complete)

• JS28F640P33BFE: Similar specifications, different package type
• JS28F640P33BFD: Similar specifications, different package type
• JS28F640P33BFA: Similar specifications, different package type
• JS28F640P33BFB: Similar specifications, different package type

(Note: This is a sample list. Please refer to the manufacturer's documentation for a complete list of alternative models.)

This entry provides an overview of the JS28F640P30BF75D flash memory, including its product category, use, characteristics, package details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.