M29W128GL90N6E

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated circuit (IC) chip
• Essence: Non-volatile memory technology for long-term data storage
• Packaging/Quantity: Typically sold individually or in bulk quantities

Specifications

• Model: M29W128GL90N6E
• Capacity: 128 gigabits (16 gigabytes)
• Voltage Range: 2.7V - 3.6V
• Interface: Parallel NOR Flash
• Operating Temperature: -40°C to +85°C
• Speed: Fast access times for efficient data transfer

Detailed Pin Configuration

The M29W128GL90N6E follows a specific pin configuration for proper functionality. The detailed pinout is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. OE#: Output enable control signal
7. RP#/BYTE#: Reset/byte enable control signal
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect/control signal
10. VSS: Ground reference

Functional Features

• High-speed read and write operations
• Efficient erase and programming algorithms
• Reliable data retention and endurance
• Low power consumption
• Compatibility with various electronic devices
• Support for multiple operating systems and interfaces

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data access times - Non-volatile memory retains data even without power - Suitable for a wide range of applications - Low power consumption

Disadvantages: - Relatively higher cost compared to other storage options - Limited write endurance cycles - Susceptible to physical damage if mishandled

Working Principles

The M29W128GL90N6E utilizes NOR flash memory technology. It stores data in a non-volatile manner, meaning it retains information even when the power is turned off. The memory cells are organized into a grid-like structure, with each cell capable of storing one bit of data. The device uses electrical charges to represent binary values (0s and 1s) within these cells. Data can be read, written, or erased by applying specific voltage levels to the appropriate pins.

Detailed Application Field Plans

The M29W128GL90N6E finds application in various electronic devices, including but not limited to:

1. Solid-state drives (SSDs)
2. Embedded systems
3. Automotive electronics
4. Industrial control systems
5. Consumer electronics (e.g., smartphones, tablets)

Its high capacity, fast access times, and reliability make it suitable for data-intensive applications that require efficient storage and retrieval.

Alternative Models

For users seeking alternative options, the following models provide similar functionality:

1. M29W128GH90N6E
2. M29W128GT90N6E
3. M29W128GX90N6E

These models offer comparable specifications and can be considered as alternatives to the M29W128GL90N6E.

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