M29W400DB55ZE6F TR

Product Overview

Category

M29W400DB55ZE6F TR belongs to the category of flash memory chips.

Use

It is primarily used for data storage in electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• Non-volatile memory: The data stored in M29W400DB55ZE6F TR is retained even when power is turned off.
• High capacity: It has a storage capacity of 4 gigabits (512 megabytes).
• Fast access time: The chip provides quick access to stored data, allowing for efficient retrieval and processing.
• Reliable performance: M29W400DB55ZE6F TR offers high reliability and durability, ensuring data integrity over extended periods of use.

Package

M29W400DB55ZE6F TR is available in a compact package that facilitates easy integration into various electronic devices. The specific package type may vary depending on the manufacturer.

Essence

The essence of M29W400DB55ZE6F TR lies in its ability to store and retrieve large amounts of data reliably and quickly, making it an essential component in modern electronic devices.

Packaging/Quantity

The chip is typically sold in reels or trays, with each reel or tray containing a specific quantity of M29W400DB55ZE6F TR chips. The exact packaging and quantity may vary based on the supplier and customer requirements.

Specifications

• Storage Capacity: 4 gigabits (512 megabytes)
• Interface: Parallel or Serial
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Time: Varies depending on the operation mode and voltage supply

Detailed Pin Configuration

The pin configuration of M29W400DB55ZE6F TR may vary depending on the manufacturer. Please refer to the datasheet provided by the specific manufacturer for detailed pin configuration information.

Functional Features

• Erase and Program Operations: M29W400DB55ZE6F TR supports both erase and program operations, allowing users to modify stored data as needed.
• Block Architecture: The chip is organized into multiple blocks, enabling efficient erasure and programming of specific sections of memory.
• Read Operation: It provides fast and reliable read access to stored data, facilitating seamless data retrieval for processing or display purposes.
• Write Protection: M29W400DB55ZE6F TR includes write protection features to prevent accidental modification or deletion of stored data.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable performance
• Compact package size
• Versatile interface options (parallel or serial)

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Higher cost compared to other types of memory technologies.

Working Principles

M29W400DB55ZE6F TR utilizes a floating-gate transistor structure to store data. The memory cells within the chip can be electrically programmed and erased using specific voltage levels. When reading data, the stored charge in each memory cell is measured to determine the stored information.

Detailed Application Field Plans

M29W400DB55ZE6F TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Smartphones - Tablets - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• M29W400DB45N1E TR
• M29W400DT70N1E TR
• M29W400DT70N6E TR
• M29W400DT70N6F TR
• M29W400DT70N1F TR

These alternative models offer similar specifications and functionality to M29W400DB55ZE6F TR, providing users with options based on their specific requirements.

Note: The list of alternative models may vary depending on the manufacturer and availability.

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