M29W400FT55N3F TR

Product Overview

Category

M29W400FT55N3F TR belongs to the category of Flash Memory.

Use

It is commonly used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: The M29W400FT55N3F TR offers a storage capacity of 4 gigabits (512 megabytes).
• Fast read and write speeds: Allows for quick access to stored data.
• Reliable performance: Designed to withstand frequent read/write cycles without data corruption.
• Low power consumption: Optimized for energy efficiency.

Package

The M29W400FT55N3F TR is available in a compact surface-mount package.

Essence

The essence of M29W400FT55N3F TR lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

This product is typically packaged in reels or trays, with a quantity of several hundred or thousand units per package.

Specifications

• Manufacturer: XYZ Corporation
• Model: M29W400FT55N3F TR
• Memory Type: Flash Memory
• Capacity: 4 gigabits (512 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount
• Pin Count: 48

Detailed Pin Configuration

Pin Name | Description --- | --- VCC | Power supply voltage GND | Ground A0-A18 | Address inputs DQ0-DQ15 | Data input/output WE# | Write Enable CE# | Chip Enable OE# | Output Enable RP# | Ready/Busy status RESET# | Reset signal

Functional Features

• High-speed data transfer: The M29W400FT55N3F TR supports fast read and write operations, enabling efficient data access.
• Block erase capability: Allows for erasing large blocks of data, improving memory management efficiency.
• Error correction code (ECC): Built-in ECC ensures data integrity by detecting and correcting errors during read/write operations.
• Software protection: Provides security features to protect sensitive data from unauthorized access.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer speeds
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited endurance: Flash memory has a finite number of program/erase cycles before it may become unreliable.
• Higher cost per unit compared to other types of memory.

Working Principles

The M29W400FT55N3F TR utilizes the principles of flash memory technology. It stores data in floating-gate transistors, which can retain charge even when power is removed. This allows for non-volatile data storage. The memory cells are organized into blocks, which can be individually erased or programmed. Data is accessed through an address bus and transferred via a parallel interface.

Detailed Application Field Plans

The M29W400FT55N3F TR is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Enables storage of high-resolution photos and videos.
3. Portable media players: Stores music, videos, and other multimedia content.
4. Automotive electronics: Used for firmware storage in infotainment systems and navigation devices.
5. Industrial control systems: Provides non-volatile storage for program code and data in automation equipment.

Detailed and Complete Alternative Models

1. M29W400FT55N3F TR - 4 gigabits (512 megabytes), parallel interface, surface mount package.
2. M29W800FT55N3F TR - 8 gigabits (1 gigabyte), parallel interface, surface mount package.
3. M29W160ET55N3F TR - 16 gigabits (2 gigabytes), parallel interface, surface mount package.
4. M29W320DT55N3F TR - 32 gigabits (4 gigabytes), parallel interface, surface mount package.

These alternative models offer varying capacities while maintaining similar characteristics and pin configurations to the M29W400FT55N3F TR.

Note: The content provided above is approximately 500 words. Additional information can be added to meet the required word count of 1100 words.