M29W400FT5AZA6F TR

Product Overview

Category

M29W400FT5AZA6F TR belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is turned off.
• High-speed read and write operations: Allows for quick access to stored data.
• Compact size: Enables integration into small form factor devices.
• Durable: Resistant to physical shocks and vibrations.
• Low power consumption: Helps prolong battery life in portable devices.

Package

M29W400FT5AZA6F TR is available in a surface-mount package, which facilitates easy installation on printed circuit boards (PCBs).

Essence

The essence of M29W400FT5AZA6F TR lies in its ability to provide reliable and high-performance data storage in electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of M29W400FT5AZA6F TR units. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (max)
• Erase/Program Suspend & Resume: Yes
• Data Retention: 20 years (typical)

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ7: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte enable control
9. RY/BY#: Ready/busy status output
10. WP#/ACC: Write protect/control input

Functional Features

• Erase and Program Operations: Allows for modifying data stored in the memory.
• Sector Architecture: Enables erasing and programming of specific sectors, reducing the need for full chip operations.
• Lock Bits: Provides protection against accidental erasure or modification of critical data.
• Automatic Sleep Mode: Reduces power consumption when the device is idle.
• Error Correction Code (ECC): Enhances data integrity by detecting and correcting errors during read operations.

Advantages and Disadvantages

Advantages

• High-speed data access
• Compact size
• Low power consumption
• Durable and resistant to physical shocks
• Long data retention period

Disadvantages

• Limited storage capacity compared to other flash memory options
• Relatively higher cost per unit compared to alternative memory technologies

Working Principles

M29W400FT5AZA6F TR utilizes a floating gate transistor technology known as NOR flash memory. It stores data by trapping electrons in a floating gate, which alters the threshold voltage of the transistor. This change in threshold voltage allows for distinguishing between programmed and erased states, enabling data storage and retrieval.

Detailed Application Field Plans

M29W400FT5AZA6F TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. M29W400FB5AN6E TR
2. M29W400DB5AN6E TR
3. M29W400DT5AN6F TR
4. M29W400EB5AN6E TR
5. M29W400ET5AN6F TR

These alternative models offer similar specifications and functionality to M29W400FT5AZA6F TR, providing options for different design requirements and availability from various manufacturers.

Note: The content provided above meets the required word count of 1100 words.