M29W640GB6AZA6F TR

Product Overview

Category

The M29W640GB6AZA6F TR belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The M29W640GB6AZA6F TR retains stored data even when power is removed.
• High capacity: This flash memory device has a storage capacity of 64 gigabytes (GB).
• Fast data transfer: It offers high-speed read and write operations, allowing for quick access to stored data.
• Compact package: The M29W640GB6AZA6F TR comes in a small form factor, making it suitable for space-constrained applications.
• Reliable performance: It provides reliable data storage with low error rates and high endurance.

Package and Quantity

The M29W640GB6AZA6F TR is packaged in a surface-mount technology (SMT) package. Each package contains one unit of the flash memory device.

Specifications

• Storage Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 104 MHz
• Erase/Program Cycles: 100,000 cycles
• Package Type: 48-ball VFBGA

Detailed Pin Configuration

The M29W640GB6AZA6F TR has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Suspends ongoing data transfer
4. WP: Write protect input
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CE: Chip enable

Functional Features

• Erase and Program Operations: The M29W640GB6AZA6F TR supports sector erase and byte/page program operations, allowing for flexible data manipulation.
• Write Protection: The WP pin can be used to protect the memory contents from accidental modification.
• Sector Lockdown: Certain sectors of the flash memory can be locked to prevent further modifications.
• Status Register: Provides information about the device's status, including write protection status and operation completion.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Compact form factor
• Reliable performance
• Flexible erase and program operations

Disadvantages

• Limited erase/program cycles (100,000 cycles)
• Relatively high power consumption during operation

Working Principles

The M29W640GB6AZA6F TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a combination of voltage levels. During read and write operations, the device uses the SPI interface to communicate with the host system.

Detailed Application Field Plans

The M29W640GB6AZA6F TR is widely used in various electronic devices that require high-capacity data storage. Some common application fields include:

1. Smartphones and tablets
2. Digital cameras and camcorders
3. Portable media players
4. Solid-state drives (SSDs)
5. Industrial control systems
6. Automotive electronics

Alternative Models

Here are some alternative models that offer similar functionality:

1. M29W640GLB6ZA6F TR
2. M29W640GTB6ZA6F TR
3. M29W640GLB6ZA6E TR
4. M29W640GTB6ZA6E TR

These models have comparable specifications and can be considered as alternatives to the M29W640GB6AZA6F TR.

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