M29W640GH70NB6F TR

Product Overview

Category

The M29W640GH70NB6F TR belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The M29W640GH70NB6F TR retains stored data even when power is removed.
• High capacity: This flash memory device has a storage capacity of 64 megabits (8 megabytes).
• High-speed data transfer: It supports fast read and write operations, enabling efficient data access.
• Low power consumption: The M29W640GH70NB6F TR is designed to consume minimal power during operation.
• Durable and reliable: It offers robust performance and can withstand frequent read/write cycles without data loss.

Package and Quantity

The M29W640GH70NB6F TR is available in a compact surface-mount package. Each package contains one flash memory device.

Specifications

• Storage Capacity: 64 megabits (8 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 10,000 cycles

Detailed Pin Configuration

The M29W640GH70NB6F TR features a 48-pin TSOP (Thin Small Outline Package) with the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. WE#
27. CE#
28. OE#
29. BYTE#
30. VSS
31. RP#
32. RY/BY#
33. RESET#
34. WP#
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Fast Read/Write Operations: The M29W640GH70NB6F TR offers high-speed data transfer, allowing quick access to stored information.
• Sector Erase Capability: It supports sector-based erasure, enabling efficient management of data storage.
• Write Protection: The device includes write protection features to prevent accidental modification or deletion of stored data.
• Power-Saving Modes: The M29W640GH70NB6F TR incorporates power-saving modes to minimize energy consumption during idle periods.

Advantages and Disadvantages

Advantages

• High storage capacity for a wide range of applications.
• Fast data transfer speeds enhance overall system performance.
• Reliable and durable design ensures data integrity.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited erase/write cycles may restrict certain applications requiring frequent data modifications.
• Parallel interface may not be compatible with newer systems that primarily use serial interfaces.

Working Principles

The M29W640GH70NB6F TR utilizes the principles of flash memory technology. It stores data by trapping electric charges in floating gate transistors, which can be electrically programmed and erased. When reading data, the stored charges are detected, allowing retrieval of the stored information.

Detailed Application Field Plans

The M29W640GH70NB6F TR is suitable for various applications, including: - Mobile devices: Smartphones, tablets, portable media players. - Digital cameras: Storage of photos and videos. - Embedded systems: Industrial control systems, automotive electronics. - Consumer electronics: Set-top boxes, gaming consoles.

Detailed and Complete Alternative Models

1. M29W640GL70NB6F TR
2. M29W640GT70NB6F TR
3. M29W640GB70NB6F TR
4. M29W640GD70NB6F TR

These alternative models offer similar specifications and functionality to the M29W640GH70NB6F TR, providing flexibility in choosing the most suitable flash memory device for specific applications.

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