MT29F128G08AMCABH2-10ITZ:A

Product Overview

Category

MT29F128G08AMCABH2-10ITZ:A belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08AMCABH2-10ITZ:A offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, it enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: This NAND flash memory provides reliable and stable performance, making it suitable for demanding applications.
• Low power consumption: It is designed to consume minimal power, contributing to energy efficiency in electronic devices.
• Compact package: The MT29F128G08AMCABH2-10ITZ:A comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F128G08AMCABH2-10ITZ:A is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Model: MT29F128G08AMCABH2-10ITZ:A
• Storage Capacity: 128 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface-Mount Device (SMD)
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F128G08AMCABH2-10ITZ:A has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC - Power supply voltage
2. GND - Ground reference
3. CE# - Chip enable
4. RE# - Read enable
5. WE# - Write enable
6. A0-A18 - Address inputs
7. DQ0-DQ15 - Data input/output
8. R/B# - Ready/busy status
9. CLE - Command latch enable
10. ALE - Address latch enable
11. WP#/ACC - Write protect or access enable
12. RST# - Reset signal

Please refer to the product datasheet for a complete and accurate pin configuration diagram.

Functional Features

• High-speed data transfer: The MT29F128G08AMCABH2-10ITZ:A offers fast read and write operations, enabling efficient data processing in electronic devices.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear leveling: This NAND flash memory utilizes wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
• Bad block management: It includes mechanisms to identify and manage defective blocks, preventing data loss and maintaining overall performance.
• Security features: The MT29F128G08AMCABH2-10ITZ:A may include security features such as hardware encryption and secure erase options to protect sensitive data.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance (compared to other non-volatile memory technologies)
• Higher cost per gigabyte compared to traditional hard disk drives

Working Principles

The MT29F128G08AMCABH2-10ITZ:A utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate.

During read operations, the controller sends an address to select the desired memory cell, and the stored charge is measured to determine the stored data. Write operations involve applying a specific voltage to program the memory cell with new data.

The working principles of NAND flash memory involve complex algorithms for error correction, wear leveling, and bad block management to ensure reliable and efficient data storage.

Detailed Application Field Plans

The MT29F128G08AMCABH2-10ITZ:A finds applications in various electronic devices that require high-capacity and fast data storage. Some potential application fields include:

1. Smartphones and tablets: The NAND flash memory provides ample storage space for apps, media files, and user data in mobile devices.