Micron Technology Inc.
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MT29F128G08CBECBH6-12M:C

MT29F128G08CBECBH6-12M:C

Product Overview

Category

MT29F128G08CBECBH6-12M:C belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F128G08CBECBH6-12M:C offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
  • Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
  • Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
  • Low power consumption: The MT29F128G08CBECBH6-12M:C is energy-efficient, consuming minimal power during operation, which is beneficial for battery-powered devices.
  • Compact package: This NAND flash memory is available in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F128G08CBECBH6-12M:C is typically packaged in a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

  • Part Number: MT29F128G08CBECBH6-12M:C
  • Memory Type: NAND Flash
  • Storage Capacity: 128 GB
  • Interface: Serial Peripheral Interface (SPI)
  • Operating Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: SMT
  • Package Dimensions: [Insert dimensions]

Detailed Pin Configuration

  1. VCC: Power supply voltage
  2. GND: Ground reference
  3. CE: Chip enable
  4. RE: Read enable
  5. WE: Write enable
  6. A0-A18: Address inputs
  7. DQ0-DQ7: Data input/output
  8. R/B: Ready/busy status
  9. WP: Write protect
  10. CLE: Command latch enable
  11. ALE: Address latch enable
  12. CEB: Chip enable bar
  13. RB/BY: Ready/busy or byte/word organization selection
  14. NC: No connection

Functional Features

  • High-speed data transfer: The MT29F128G08CBECBH6-12M:C offers fast read and write speeds, allowing for efficient data processing.
  • Error correction: This NAND flash memory incorporates error correction techniques to ensure data integrity and reliability.
  • Wear leveling: The product employs wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
  • Bad block management: The MT29F128G08CBECBH6-12M:C includes a mechanism for identifying and managing bad blocks, enhancing overall performance and longevity.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Reliable performance
  • Low power consumption
  • Compact package size

Disadvantages

  • Higher cost compared to other types of memory
  • Limited endurance (number of program/erase cycles)

Working Principles

The MT29F128G08CBECBH6-12M:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. Writing data involves applying a specific voltage to program the desired charge level.

Detailed Application Field Plans

The MT29F128G08CBECBH6-12M:C is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

  1. MT29F128G08CBECBH6-12M:A
  2. MT29F128G08CBECBH6-12M:B
  3. MT29F128G08CBECBH6-12M:D
  4. MT29F128G08CBECBH6-12M:E

These alternative models offer similar specifications and functionality to the MT29F128G08CBECBH6-12M:C, providing options for different customer requirements and compatibility.

In conclusion, the MT29F128G08CBECBH6-12M:C is a high-capacity NAND flash memory with fast data transfer rates, reliable performance, and low power consumption. It finds applications in

기술 솔루션에 MT29F128G08CBECBH6-12M:C 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. Question: What is the capacity of the MT29F128G08CBECBH6-12M:C?
    Answer: The MT29F128G08CBECBH6-12M:C has a capacity of 128 gigabits (16 gigabytes).

  2. Question: What is the operating voltage range for this memory chip?
    Answer: The operating voltage range for the MT29F128G08CBECBH6-12M:C is typically between 2.7V and 3.6V.

  3. Question: What is the maximum clock frequency supported by this memory chip?
    Answer: The MT29F128G08CBECBH6-12M:C supports a maximum clock frequency of 100 MHz.

  4. Question: Does this memory chip support random access or sequential access?
    Answer: The MT29F128G08CBECBH6-12M:C supports random access, allowing for efficient read and write operations.

  5. Question: What is the typical endurance rating for this memory chip?
    Answer: The MT29F128G08CBECBH6-12M:C has a typical endurance rating of 10,000 program/erase cycles.

  6. Question: Is this memory chip compatible with standard NAND flash interfaces?
    Answer: Yes, the MT29F128G08CBECBH6-12M:C is designed to be compatible with standard NAND flash interfaces, making it easy to integrate into existing systems.

  7. Question: What is the page size of this memory chip?
    Answer: The MT29F128G08CBECBH6-12M:C has a page size of 8 kilobytes.

  8. Question: Does this memory chip support hardware data protection features?
    Answer: Yes, the MT29F128G08CBECBH6-12M:C supports hardware data protection features such as ECC (Error Correction Code) and bad block management.

  9. Question: What is the typical data retention period for this memory chip?
    Answer: The MT29F128G08CBECBH6-12M:C has a typical data retention period of 10 years.

  10. Question: Is this memory chip suitable for automotive or industrial applications?
    Answer: Yes, the MT29F128G08CBECBH6-12M:C is designed to meet the requirements of automotive and industrial applications, including extended temperature ranges and high reliability.