MT29F16G08AFABAWP:B

Product Overview

Category

MT29F16G08AFABAWP:B belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F16G08AFABAWP:B offers a storage capacity of 16 gigabytes.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F16G08AFABAWP:B comes in a small form factor, enabling its integration into space-constrained devices.

Package and Quantity

The product is packaged in a compact chip format. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 16 gigabytes (GB)
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to 85°C
• Read/Write Speed: Up to 100 megabytes per second (MB/s)
• Erase Block Size: 128 kilobytes (KB)

Pin Configuration

The detailed pin configuration for MT29F16G08AFABAWP:B is as follows:

1. VCC - Power Supply
2. GND - Ground
3. CE - Chip Enable
4. RE - Read Enable
5. WE - Write Enable
6. A0-A18 - Address Inputs
7. DQ0-DQ15 - Data Input/Output
8. R/B - Ready/Busy
9. CLE - Command Latch Enable
10. ALE - Address Latch Enable

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of data in large blocks, improving efficiency.
• Random Access: Provides random access to any memory location, allowing for quick retrieval of information.
• Wear-Leveling: Implements wear-leveling algorithms to evenly distribute write operations across the memory cells, extending the lifespan of the device.
• Error Correction Code (ECC): Utilizes ECC techniques to detect and correct errors that may occur during data transmission or storage.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate ensures quick access to stored information.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for easy integration into various electronic devices.
• Reliable performance ensures data integrity and longevity.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it becomes unreliable.
• Susceptible to data loss: Power interruptions during write operations can result in data corruption or loss.
• Relatively higher cost compared to other types of memory.

Working Principles

MT29F16G08AFABAWP:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read data, the controller applies voltages to specific cells and measures the resulting electrical current. Writing data involves applying precise voltage levels to program the desired charge on the floating gate. Erasing data is achieved by removing the charge from the floating gate using high voltage pulses.

Application Field Plans

MT29F16G08AFABAWP:B finds applications in various electronic devices, including: - Smartphones and tablets for data storage and app execution. - Digital cameras for storing photos and videos. - Solid-state drives (SSDs) for high-speed data storage in computers and servers. - Portable media players for storing music and video files.

Alternative Models

Some alternative models to MT29F16G08AFABAWP:B include: - Samsung K9K8G08U0B - Toshiba TH58NVG7D2FLA89 - Micron MT29F16G08CBACAWP

These models offer similar specifications and functionality, providing options for different manufacturers or specific project requirements.

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